MT53D512M64D4NW-062 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.6GHZ 432VFBGA |
|---|---|
| Quantity | 241 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4NW-062 WT ES:D – IC DRAM 32 Gbit 1.6 GHz 432-VFBGA
The MT53D512M64D4NW-062 WT ES:D from Micron Technology Inc. is a volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture. It is organized as 512M × 64 for a total density of 32 Gbit, and is specified with a 1.6 GHz clock frequency and a 1.1 V supply.
Packaged in a 432-VFBGA (15×15) case and rated for an operating temperature range of -30°C to 85°C (TC), this device addresses system designs that require mobile LPDDR4 memory in a compact form factor.
Key Features
- Memory Core 32 Gbit DRAM organized as 512M × 64 using Mobile LPDDR4 SDRAM architecture.
- Clock Frequency Specified 1.6 GHz clock frequency.
- Power Single supply voltage of 1.1 V.
- Package 432-VFBGA package case with 15×15 mm dimensions.
- Operating Temperature Rated for -30°C to 85°C (TC).
- Memory Format & Technology Volatile DRAM, SDRAM - Mobile LPDDR4.
Typical Applications
- Mobile Devices Use as LPDDR4 system memory where mobile-class SDRAM is specified.
- Embedded Systems High-density 32 Gbit memory option for embedded designs requiring LPDDR4.
- Consumer Electronics Compact 432-VFBGA package suitable for space-constrained consumer products that integrate mobile LPDDR4 memory.
Unique Advantages
- High-density 32 Gbit capacity: Provides large memory capacity in a single device, enabling consolidation of memory arrays.
- Mobile LPDDR4 architecture: Built to the SDRAM - Mobile LPDDR4 specification for systems targeting that memory type.
- 1.6 GHz clocking: Supports the device's specified high-frequency operation.
- Low-voltage 1.1 V operation: Matches low-voltage memory designs to reduce supply requirements.
- Compact 432-VFBGA (15×15) package: Small footprint package for dense board layouts.
- Wide operating temperature range: -30°C to 85°C (TC) rating for designs that require broader thermal tolerance.
Why Choose MT53D512M64D4NW-062 WT ES:D?
The MT53D512M64D4NW-062 WT ES:D delivers 32 Gbit of Mobile LPDDR4 DRAM capacity with a 1.6 GHz clock specification and 1.1 V supply in a compact 432-VFBGA (15×15) package. Its -30°C to 85°C operating range and Micron Technology Inc. manufacturing source make it a clear option for designs that require the stated LPDDR4 memory specifications.
This device is appropriate for engineers and procurement teams seeking a high-density mobile LPDDR4 DRAM component whose package, voltage and temperature specifications align with system requirements.
Request a quote or submit a sales inquiry to receive pricing, availability and ordering information for the MT53D512M64D4NW-062 WT ES:D.
