MT53D512M64D4NW-062 WT:D
| Part Description |
IC DRAM 32GBIT 1.6GHZ 432VFBGA |
|---|---|
| Quantity | 1,016 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4NW-062 WT:D – Mobile LPDDR4 32 Gbit DRAM, 1.6 GHz, 432‑VFBGA
The MT53D512M64D4NW-062 WT:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 512M x 64 memory organization with a 1.6 GHz clock frequency and operates from a 1.1 V supply.
Engineered for mobile and compact system applications, this device combines high density, low-voltage operation and a compact 432‑VFBGA (15×15) package for space-constrained designs that require high-capacity volatile memory and specified temperature capability.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM technology providing volatile DRAM storage with a 512M × 64 organization.
- Density 32 Gbit memory size suitable for high-capacity mobile memory subsystems.
- Performance 1.6 GHz clock frequency enabling high-bandwidth DRAM operation.
- Power Low-voltage operation at 1.1 V to support power-sensitive designs.
- Package 432‑VFBGA package in a 15×15 form factor for compact board-level integration.
- Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) for a variety of environmental conditions.
Typical Applications
- Mobile devices — Memory subsystem for smartphones and handheld devices that use Mobile LPDDR4 SDRAM technology.
- Portable multimedia — High-density volatile memory for tablets and portable media players requiring compact package size.
- Embedded systems — Dense DRAM storage for space-constrained embedded designs that require low-voltage operation.
Unique Advantages
- High memory capacity: 32 Gbit density supports designs needing large volatile memory footprints.
- High-speed operation: 1.6 GHz clock frequency enables increased data throughput in memory-intensive applications.
- Low-voltage operation: 1.1 V supply reduces overall power consumption in battery-powered systems.
- Compact packaging: 432‑VFBGA (15×15) package minimizes board area for space-limited layouts.
- Extended temperature capability: −30°C to 85°C (TC) operating range supports deployment across a range of environmental conditions.
- Standard memory organization: 512M × 64 configuration simplifies memory planning for engineers.
Why Choose MT53D512M64D4NW-062 WT:D?
The MT53D512M64D4NW-062 WT:D positions itself as a high-density, low-voltage Mobile LPDDR4 DRAM option delivering 1.6 GHz operation in a compact 432‑VFBGA package. Its 32 Gbit capacity and 512M × 64 organization make it suitable for designs that require substantial volatile memory in a small footprint.
With a specified operating range from −30°C to 85°C and a 1.1 V supply, this device is applicable to mobile and embedded applications where power efficiency, density and compact integration are priorities.
Request a quote or contact sales to discuss pricing, availability and lead times for the MT53D512M64D4NW-062 WT:D.
