MT53D512M64D4NY-046 XT ES:E TR

The MT53D512M64D4NY-046 XT ES:E TR is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It delivers a 512M × 64 memory organization in an FBGA package and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.

This device is intended for systems that require high-density LPDDR4 volatile memory and operation across an extended temperature range, offering a balance of density, frequency, and low-voltage operation.

Key Features

• Memory Type & Format Volatile DRAM implemented as SDRAM - Mobile LPDDR4, providing standard LPDDR4 architecture in a DRAM format.
• Density & Organization 32 Gbit total capacity arranged as 512M × 64, supporting wide data paths for high-throughput designs.
• Clock Frequency Operates at 2.133 GHz to support high-speed memory access patterns.
• Power Low-voltage operation at 1.1 V to align with mobile LPDDR4 power requirements.
• Operating Temperature Specified operating temperature range of −30°C to 105°C (TC) for use in thermally demanding environments.
• Package Delivered in an FBGA package as indicated by the product designation.
• Manufacturer Manufactured by Micron Technology Inc.

Typical Applications

• Mobile devices — Provides 32 Gbit LPDDR4 volatile memory suitable for mobile memory subsystems requiring low-voltage, high-frequency operation.
• High-density memory modules — Used where compact, high-capacity DRAM is required for buffering, caching, or main memory functions.
• Thermally demanding systems — Applicable to designs that need memory components capable of operating across −30°C to 105°C.

Unique Advantages

• High-density capacity: 32 Gbit total memory supports applications needing substantial on-board DRAM capacity.
• Wide data organization: 512M × 64 organization enables broader data paths for improved throughput in compatible systems.
• High-frequency operation: 2.133 GHz clock frequency supports higher-bandwidth memory access patterns.
• Low-voltage operation: 1.1 V supply reduces power draw relative to higher-voltage alternatives compatible with LPDDR4 designs.
• Extended temperature range: Specified operation from −30°C to 105°C accommodates a range of environmental conditions.
• Standard LPDDR4 architecture: Mobile LPDDR4 SDRAM technology aligns with designs that target LPDDR4 memory implementations.

Why Choose IC DRAM 32GBIT 2.133GHZ FBGA?

The MT53D512M64D4NY-046 XT ES:E TR positions itself as a high-density LPDDR4 DRAM option combining 32 Gbit capacity, a 512M × 64 organization, and a 2.133 GHz operating frequency at a 1.1 V supply. These characteristics make it suitable for designs that require substantial volatile memory capacity with mobile LPDDR4 electrical characteristics.

Engineers and procurement teams seeking a Micron-manufactured LPDDR4 DRAM with extended temperature capability will find this device applicable for systems prioritizing density, low-voltage operation, and higher-frequency memory access.

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