MT53D512M64D4NZ-053 WT:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 376WFBGA |
|---|---|
| Quantity | 177 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 376-WFBGA (14x14) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 376-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4NZ-053 WT:D TR – IC DRAM 32GBIT 1.866GHZ 376WFBGA
The MT53D512M64D4NZ-053 WT:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 512M × 64 memory organization with a 1.866 GHz clock frequency and operates from a 1.1 V supply.
Packaged in a 376‑WFBGA (14×14) and rated for operation from −30°C to 85°C, this device targets space‑constrained memory subsystems and applications that require LPDDR4 DRAM integration.
Key Features
- Core Memory Mobile LPDDR4 SDRAM architecture providing volatile DRAM storage.
- Density & Organization 32 Gbit total capacity organized as 512M × 64 for wide data paths and aggregated storage capacity.
- Clock Frequency 1.866 GHz operating clock frequency specified for timing reference and system integration.
- Power 1.1 V supply voltage suited to low‑voltage LPDDR4 system designs.
- Package 376‑WFBGA package (14 × 14 mm) for compact, surface‑mount integration.
- Operating Temperature Specified operating range of −30°C to 85°C for deployment across a broad environmental envelope.
Typical Applications
- Mobile memory subsystems — Designed for LPDDR4-based mobile applications that require compact, board‑level DRAM components.
- Compact computing platforms — Suited to small‑footprint devices where a 376‑WFBGA package supports dense PCB layouts.
- Embedded systems — Used in embedded designs needing 32 Gbit volatile memory with LPDDR4 interfaces.
Unique Advantages
- Large memory capacity: 32 Gbit density provides substantial storage in a single device, reducing the number of memory components required.
- Wide data organization: 512M × 64 configuration offers a wide data path for system memory mapping and bus utilization.
- Low‑voltage operation: 1.1 V supply supports low‑power system designs and LPDDR4 power architectures.
- Compact WFBGA packaging: 376‑WFBGA (14×14) footprint enables dense PCB placement and space savings.
- Extended operating range: −30°C to 85°C rating allows deployment across a broad set of environmental conditions.
- Defined clocking: 1.866 GHz clock frequency enables predictable timing integration into LPDDR4 systems.
Why Choose IC DRAM 32GBIT 1.866GHZ 376WFBGA?
The MT53D512M64D4NZ-053 WT:D TR delivers a combination of high density, LPDDR4 architecture, and a compact 376‑WFBGA package, making it suitable for designs that require significant volatile memory in a small form factor. Its specified 1.866 GHz clock and 1.1 V supply align with LPDDR4 system requirements.
This device is a practical choice for engineers developing mobile, embedded, or compact computing platforms that need a reliable 32 Gbit LPDDR4 DRAM option with a defined operating temperature range and surface‑mount packaging.
Request a quote or submit a sales inquiry to receive pricing and availability information for the MT53D512M64D4NZ-053 WT:D TR.
