MT53D512M64D4RQ-046 WT:E TR

The MT53D512M64D4RQ-046 WT:E TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology and manufactured by Micron Technology Inc. It is organized as 512M x 64 and operates at a clock frequency of 2.133 GHz.

Designed for applications that require high-speed LPDDR4 memory in a compact package, this device offers low-voltage operation and a defined industrial temperature range for deployment in temperature‑sensitive systems.

Key Features

• Memory Core 32 Gbit DRAM, organized as 512M × 64, provided in Mobile LPDDR4 SDRAM technology for high-density memory arrays.
• Performance Rated clock frequency of 2.133 GHz for high data-rate operation within LPDDR4 specifications.
• Power Single supply voltage of 1.1 V supports low-voltage operation typical of LPDDR4 devices.
• Package & Mounting 556‑WFBGA package (12.4 × 12.4 mm) provides a compact footprint for board-level integration; mounting type listed as volatile memory device.
• Operating Temperature Specified operating case temperature range of −30°C to 85°C (TC) for use in temperature‑variable environments.
• Memory Format DRAM memory format suitable for systems requiring volatile main or system memory.

Typical Applications

• Mobile devices — Mobile LPDDR4 technology and 1.1 V operation make this device suitable for space‑constrained mobile memory implementations.
• Compact embedded systems — High 32 Gbit density in a 556‑WFBGA package supports designs requiring significant memory capacity in a small footprint.
• High‑speed memory subsystems — 2.133 GHz clock frequency enables use where elevated DRAM data rates are required.

Unique Advantages

• High-density DRAM: 32 Gbit capacity in a single device reduces board-level component count for high-capacity memory designs.
• Elevated data rate: 2.133 GHz clock frequency provides increased throughput for bandwidth-sensitive applications.
• Low-voltage operation: 1.1 V supply supports lower power consumption compared with higher-voltage alternatives.
• Compact WFBGA package: 556‑WFBGA (12.4 × 12.4 mm) enables compact system layouts and efficient PCB space utilization.
• Wide operating range: −30°C to 85°C case temperature rating supports deployment across a broad set of thermal environments.

Why Choose IC DRAM 32GBIT 2.133GHZ 556WFBGA?

The MT53D512M64D4RQ-046 WT:E TR combines Mobile LPDDR4 architecture with a 32 Gbit density and a 2.133 GHz clock rating to deliver a compact, high‑speed DRAM option for designs that require substantial memory capacity in a small package. Its 1.1 V supply and 556‑WFBGA (12.4 × 12.4 mm) footprint address low-voltage and space-constrained design goals while the −30°C to 85°C operating range supports a variety of thermal environments.

This device is well suited for engineers specifying LPDDR4 DRAM for mobile‑class and compact system implementations who need verifiable density, speed, and package data to inform board‑level integration and thermal planning.

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