MT53D512M64D4RQ-046 WT:E
| Part Description |
IC DRAM 32GBIT 2.133GHZ 556WFBGA |
|---|---|
| Quantity | 1,140 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 556-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4RQ-046 WT:E – IC DRAM 32GBIT 2.133GHZ 556WFBGA
The MT53D512M64D4RQ-046 WT:E is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M x 64 and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.
Packaged in a 556-ball WFBGA (12.4 × 12.4 mm) and specified for an operating temperature range of −30°C to 85°C, this memory device targets compact systems requiring high-density mobile LPDDR4 memory.
Key Features
- Memory Core 32 Gbit DRAM organized as 512M × 64 for high-density volatile storage.
- Technology Mobile LPDDR4 SDRAM architecture providing the specified LPDDR4 feature set.
- Performance Clock frequency rated at 2.133 GHz to support high-speed memory operation.
- Power Low-voltage operation at 1.1 V to match LPDDR4 power domains and support power-sensitive designs.
- Package 556-WFBGA package in a 12.4 × 12.4 mm footprint for dense, soldered board integration.
- Operating Temperature Specified for −30°C to 85°C (TC) to support a range of environmental conditions.
Typical Applications
- Mobile devices — Memory for LPDDR4-based mobile and handheld designs that require 32 Gbit capacity.
- Portable electronics — Compact, low-voltage DRAM for space-constrained consumer and industrial products.
- Embedded systems — High-density volatile memory for integration with system-on-chip platforms using LPDDR4 interfaces.
Unique Advantages
- High density (32 Gbit): Enables large memory capacity in a single DRAM component to reduce component count.
- High data-rate capability: 2.133 GHz clock frequency supports fast memory access requirements.
- Low-voltage operation: 1.1 V supply reduces overall power consumption in LPDDR4 system designs.
- Compact WFBGA package: 556-ball 12.4 × 12.4 mm package supports compact PCB layouts and high integration.
- Extended temperature range: −30°C to 85°C ratings support deployment across varied operating environments.
Why Choose IC DRAM 32GBIT 2.133GHZ 556WFBGA?
The MT53D512M64D4RQ-046 WT:E provides a combination of high density, LPDDR4 technology, and high-frequency operation in a compact 556-WFBGA package. These characteristics make it suitable for designs that require substantial volatile memory capacity with LPDDR4 electrical characteristics and a 1.1 V power domain.
Engineers specifying this device can leverage its 32 Gbit organization, 2.133 GHz timing, and specified operating temperature range to support integration into mobile, portable, and embedded platforms where board space, power, and memory capacity are key constraints.
Request a quote or submit an inquiry to receive pricing, availability, and additional technical information for the MT53D512M64D4RQ-046 WT:E.
