MT53D512M64D4NZ-053 WT:D

The MT53D512M64D4NZ-053 WT:D is a volatile DRAM device implementing Mobile LPDDR4 SDRAM technology. It provides 32 Gbit of memory capacity organized as 512M x 64 with a rated clock frequency of 1.866 GHz and a 1.1 V supply.

Packaged in a compact 376‑WFBGA (14×14) footprint and specified for operation from −30°C to 85°C (TC), this device addresses applications that require high-density LPDDR4 memory at low core voltage levels. The device is manufactured by Micron Technology Inc.

Key Features

• Core / Memory Technology  Mobile LPDDR4 SDRAM architecture offering volatile DRAM operation suitable for systems using LPDDR4 memory.
• Memory Capacity & Organization  32 Gbit total capacity organized as 512M x 64, enabling high-density memory arrays within a single package.
• Clock Frequency  Rated clock frequency of 1.866 GHz to meet specified high-speed memory timing requirements.
• Supply Voltage  Low-voltage operation at 1.1 V as specified for the device core supply.
• Package  376‑WFBGA package in a 14×14 mm footprint for compact board-level integration.
• Operating Temperature  Specified operating range of −30°C to 85°C (TC) for temperature-dependent system design considerations.

Typical Applications

• Mobile devices  LPDDR4 technology and low-voltage operation make the device suitable for systems that use mobile-class memory interfaces.
• High-density memory modules  32 Gbit capacity and 512M x 64 organization allow integration into memory modules where board space is constrained.
• Embedded systems  Compact 376‑WFBGA packaging and defined temperature range support embedded designs requiring high-density DRAM.

Unique Advantages

• High-density 32 Gbit capacity:  Consolidates large memory requirements into a single device, reducing component count on the bill of materials.
• 1.866 GHz rated operation:  Provides a defined high clock frequency for designs targeting LPDDR4 performance levels.
• Low-voltage 1.1 V core:  Enables designs targeting reduced core power consumption consistent with LPDDR4 supply levels.
• Compact 376‑WFBGA (14×14):  Small package footprint aids board space optimization and dense system layouts.
• Wide operating temperature:  −30°C to 85°C (TC) rating supports a range of temperature environments for deployed systems.

Why Choose IC DRAM 32GBIT 1.866GHZ 376WFBGA?

The MT53D512M64D4NZ-053 WT:D combines Mobile LPDDR4 architecture, high 32 Gbit density, and a 1.866 GHz clock rating with 1.1 V supply requirements, packaged in a 376‑WFBGA (14×14) form factor. These defined electrical and mechanical attributes make it suitable for designs that require compact, high-capacity LPDDR4 memory with specified temperature performance.

As a Micron Technology Inc. device, it provides a clear specification set for engineers and procurement teams evaluating memory solutions where capacity, clocking, package size, and operating temperature are primary selection criteria.

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