MT53D512M64D4NZ-053 WT ES:D

The MT53D512M64D4NZ-053 WT ES:D is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM architecture. It provides a 512M × 64 memory organization with a 1.866 GHz clock frequency and is supplied at 1.1 V.

This device is intended for integration into space-constrained, mobile-oriented designs that require high-density memory in a 376‑WFBGA (14×14) package and support operation across a −30°C to 85°C temperature range.

Key Features

• Memory Core 32 Gbit DRAM organized as 512M × 64, providing a high-density memory footprint for system integration.
• Technology Mobile LPDDR4 SDRAM architecture implemented for mobile-class memory applications.
• Clock Performance Rated clock frequency of 1.866 GHz to meet LPDDR4 timing requirements.
• Power 1.1 V supply voltage compatible with low-voltage system designs.
• Package 376‑WFBGA package in a 14 × 14 mm footprint for compact board-level integration.
• Operating Range Specified operating temperature range of −30°C to 85°C (TC) for use across varied thermal environments.
• Memory Type & Format Volatile memory; DRAM format suitable for transient system memory requirements.

Typical Applications

• Mobile devices — Memory integration for mobile platforms leveraging Mobile LPDDR4 technology and 32 Gbit density.
• Compact electronics modules — High-density 376‑WFBGA (14×14) package enables board-level memory in space-constrained designs.
• Low-voltage systems — 1.1 V operation supports designs targeting reduced supply voltages.
• Thermally varied environments — Rated for −30°C to 85°C operation to accommodate a range of ambient conditions.

Unique Advantages

• High-density 32 Gbit capacity: Enables larger memory footprints within a single DRAM die.
• Mobile LPDDR4 architecture: LPDDR4 technology coupled with a 1.866 GHz clock rating aligns with mobile memory performance profiles.
• Low-voltage operation: 1.1 V supply supports integration into low-voltage power domains.
• Compact WFBGA package: 376‑ball WFBGA (14×14) facilitates dense board layouts and module-level assembly.
• Extended temperature capability: −30°C to 85°C rating supports deployment across a range of thermal conditions.
• Standard memory organization: 512M × 64 format simplifies memory mapping and integration.

Why Choose MT53D512M64D4NZ-053 WT ES:D?

The MT53D512M64D4NZ-053 WT ES:D provides a combination of high density, LPDDR4 mobile architecture, and compact packaging suitable for designers needing 32 Gbit DRAM in constrained form factors. Its 1.866 GHz clock rating and 1.1 V supply make it appropriate for mobile-class memory implementations that require low-voltage operation and standardized memory organization.

Engineers specifying this device will find a solution aligned to mobile and compact-system design constraints, with an operating temperature range and package type that support integration into a variety of platform-level deployments.

Request a quote or contact sales for pricing, availability, and to discuss integration support for the MT53D512M64D4NZ-053 WT ES:D.