MT53D512M64D4NZ-053 WT ES:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 376WFBGA |
|---|---|
| Quantity | 204 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 376-WFBGA (14x14) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 376-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4NZ-053 WT ES:D TR – IC DRAM 32GBIT 1.866GHZ 376WFBGA
The MT53D512M64D4NZ-053 WT ES:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It delivers a 512M × 64 memory organization operating at a clock frequency of 1.866 GHz and is supplied in a 376-WFBGA package.
Targeted for mobile LPDDR4 memory applications, this Micron Technology Inc. device provides high-density memory in a compact package with a 1.1 V supply and an operating temperature range of -30°C to 85°C.
Key Features
- Memory Core 32 Gbit DRAM implemented as 512M × 64 organization for high-density memory capacity in a single device.
- Technology Mobile LPDDR4 SDRAM architecture specified for low-power, high-speed memory applications.
- Performance Rated clock frequency of 1.866 GHz to support high-speed memory transactions.
- Power 1.1 V nominal voltage supply suited to low-voltage system designs.
- Package 376-WFBGA (14 × 14 mm) package for compact board-level integration.
- Operating Range Temperature range from -30°C to 85°C (TC) to accommodate a variety of thermal environments.
- Form Factor Volatile DRAM format in a 376-WFBGA supplier device package.
Typical Applications
- Mobile devices — High-density LPDDR4 memory for mobile and handheld products requiring compact, low-voltage DRAM.
- Portable consumer electronics — On-board memory integration where 32 Gbit capacity and a 14×14 mm WFBGA package save board space.
- Embedded systems — High-speed volatile memory for embedded designs that leverage Mobile LPDDR4 technology and 1.866 GHz operation.
Unique Advantages
- High-density memory: 32 Gbit capacity in a single device reduces the need for multiple DRAM components.
- High-speed operation: 1.866 GHz clock frequency supports demanding memory throughput within the constraints of provided specifications.
- Low-voltage operation: 1.1 V supply enables lower power consumption consistent with mobile LPDDR4 designs.
- Compact package: 376-WFBGA (14×14) package minimizes PCB footprint for space-constrained layouts.
- Extended temperature capability: -30°C to 85°C operating range supports deployment across a variety of thermal conditions.
Why Choose IC DRAM 32GBIT 1.866GHZ 376WFBGA?
This Micron Technology Inc. Mobile LPDDR4 DRAM device combines 32 Gbit capacity, 1.866 GHz operation, and a low 1.1 V supply in a compact 376-WFBGA package. It is positioned for designs that require high-density, high-speed volatile memory in a small form factor with an extended operating temperature range.
Designs and customers targeting mobile and embedded applications that need a balance of density, speed, and low-voltage operation will find this device applicable for integration where footprint and thermal range are important considerations.
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