MT53D512M64D4NY-046 XT ES:E

The MT53D512M64D4NY-046 XT ES:E is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.

This device targets designs that require high-density, high-frequency LPDDR4 memory with an extended operating temperature range of -30°C to 105°C (TC).

Key Features

• Core / Technology 
  Mobile LPDDR4 SDRAM architecture providing the specified DRAM technology for mobile-class memory applications.
• Memory Capacity & Organization 
  32 Gbit total capacity organized as 512M × 64 to support 64-bit data widths.
• Clock Frequency 
  Rated for operation at 2.133 GHz clock frequency to meet high-speed memory requirements.
• Voltage Supply 
  Operates from a 1.1 V supply consistent with LPDDR4 voltage requirements.
• Memory Type 
  Volatile DRAM formatted as DRAM for temporary data storage in active systems.
• Operating Temperature 
  Specified operating range of -30°C to 105°C (TC) for use in extended temperature environments.
• Package Style 
  FBGA package format as indicated in the product designation.

Typical Applications

• Mobile and portable systems 
  Use where Mobile LPDDR4 memory is required for high-density, high-frequency DRAM storage.
• High-density memory modules 
  Integration into modules or designs that require 32 Gbit memory organized as 512M × 64.
• High-frequency DRAM subsystems 
  Designs that require DRAM operation at a 2.133 GHz clock rate.
• Extended-temperature applications 
  Systems that operate across -30°C to 105°C (TC) and need verified temperature-range components.

Unique Advantages

• High memory density (32 Gbit): Enables larger working datasets and higher capacity in a single DRAM component.
• 512M × 64 organization: Provides a 64-bit data interface arrangement useful for wide data-path designs.
• High-speed operation (2.133 GHz): Supports designs requiring elevated DRAM clock rates.
• LPDDR4 technology: Built on Mobile LPDDR4 SDRAM specification as stated in the product data.
• 1.1 V supply: Matches the specified LPDDR4 supply voltage, simplifying power-rail planning for compatible systems.
• Extended temperature rating: Specified -30°C to 105°C (TC) for deployments across a broad thermal range.

Why Choose IC DRAM 32GBIT 2.133GHZ FBGA?

The MT53D512M64D4NY-046 XT ES:E positions itself as a high-density, high-frequency Mobile LPDDR4 DRAM option for designs that require 32 Gbit capacity, a 512M × 64 organization, and operation at 2.133 GHz with a 1.1 V supply. Its specified operating range of -30°C to 105°C (TC) supports use in environments with extended temperature requirements.

Manufactured by Micron Technology Inc., this device is suitable for engineers and procurement teams sourcing LPDDR4 components where capacity, clock rate, and temperature range are primary selection criteria.

Request a quote or submit an inquiry for the MT53D512M64D4NY-046 XT ES:E to obtain pricing and availability information specific to your project requirements.