MT53D512M64D4NW-053 WT:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 432VFBGA |
|---|---|
| Quantity | 917 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4NW-053 WT:D – IC DRAM 32GBIT 1.866GHZ 432VFBGA
The MT53D512M64D4NW-053 WT:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 512M × 64 and operates at a clock frequency of 1.866 GHz.
Designed for high-density, low-voltage memory requirements, this device provides 1.1 V supply operation in a compact 432‑VFBGA (15 × 15) package and supports an operating temperature range of −30°C to 85°C.
Key Features
- Memory Core / Architecture Mobile LPDDR4 SDRAM implemented as volatile DRAM with a total memory size of 32 Gbit organized as 512M × 64.
- Clock Frequency 1.866 GHz operating clock frequency for high-rate operation.
- Power 1.1 V supply voltage for low-voltage memory operation.
- Package 432‑VFBGA package in a 15 × 15 mm footprint for compact board integration.
- Temperature Range Specified operating temperature range of −30°C to 85°C (TC).
- Memory Format & Mounting DRAM memory format intended for surface-mount applications.
Typical Applications
- Mobile devices Use where Mobile LPDDR4 DRAM is required to provide high-density memory in compact form factors.
- High-density memory modules Applications that require 32 Gbit memory capacity in a 15 × 15 mm 432‑VFBGA package.
- Low-voltage designs Systems targeting 1.1 V supply operation to meet power-sensitive memory requirements.
Unique Advantages
- Large memory capacity: 32 Gbit density supports higher on-board storage without additional components.
- High operating frequency: 1.866 GHz clock frequency enables high-rate memory operation consistent with LPDDR4 performance targets.
- Low-voltage operation: 1.1 V supply reduces memory power draw where low-voltage operation is required.
- Compact packaging: 432‑VFBGA (15 × 15) package minimizes board area for dense system designs.
- Broad temperature capability: −30°C to 85°C operating range supports a variety of thermal environments.
Why Choose MT53D512M64D4NW-053 WT:D?
The MT53D512M64D4NW-053 WT:D positions itself as a high-density Mobile LPDDR4 DRAM offering a balance of memory capacity, clock performance, and low-voltage operation in a compact 432‑VFBGA package. Its 512M × 64 organization and 1.866 GHz clock frequency make it suitable for designs that require significant on-board DRAM capacity with LPDDR4 architecture.
This device is appropriate for product teams and designs prioritizing dense memory integration, low-voltage operation, and a small package footprint, while supporting operation across a defined industrial temperature window.
For pricing, lead times, or to request a quote, please request a quote or contact sales to discuss availability and ordering options.
