MT53D512M64D4NW-053 WT ES:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 432VFBGA |
|---|---|
| Quantity | 512 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4NW-053 WT ES:D TR – 32 Gbit LPDDR4 DRAM, 1.866 GHz, 432‑VFBGA
The MT53D512M64D4NW-053 WT ES:D TR is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It delivers 512M × 64 organization with a rated clock frequency of 1.866 GHz and operates from a 1.1 V supply.
This device is intended for applications that require high-density, high-speed mobile LPDDR4 memory in a compact 432‑VFBGA (15×15) package and supports operation across a commercial temperature range of −30°C to 85°C.
Key Features
- Core / Memory 32 Gbit DRAM organized as 512M × 64 using Mobile LPDDR4 SDRAM architecture for high-density memory integration.
- Performance Rated clock frequency of 1.866 GHz to support high-throughput memory operations.
- Power Low-voltage operation at 1.1 V to support power-sensitive mobile and embedded designs.
- Package 432‑VFBGA package (15×15) for compact board footprint and dense memory integration.
- Environmental / Temperature Range Specified to operate from −30°C to 85°C (TC) for a range of commercial and industrial ambient conditions.
- Mounting / Format Volatile memory format (DRAM) optimized for soldered BGA assembly in system-level designs.
Typical Applications
- Mobile devices — High-density LPDDR4 memory for smartphones, tablets, and other handheld products requiring compact, low-voltage DRAM.
- Embedded compute modules — System-on-module and embedded platforms that need 32 Gbit of soldered DRAM in a small BGA footprint.
- High-density memory subsystems — Integration into memory arrays and modules where 512M × 64 organization and 1.866 GHz operation are required.
Unique Advantages
- High memory capacity: 32 Gbit density supports large in-memory datasets and high-capacity system designs.
- High-speed operation: 1.866 GHz clock frequency enables increased memory throughput for performance-sensitive workloads.
- Low-voltage operation: 1.1 V supply reduces power consumption for mobile and embedded applications.
- Compact BGA package: 432‑VFBGA (15×15) package minimizes PCB area while enabling surface-mount assembly.
- Broad operating range: Specified operation from −30°C to 85°C supports use across a range of environmental conditions.
Why Choose IC DRAM 32GBIT 1.866GHZ 432VFBGA?
The MT53D512M64D4NW-053 WT ES:D TR positions itself as a high-density, high-speed LPDDR4 DRAM option suitable for designs that require 32 Gbit of on-board memory with 1.866 GHz operation and low 1.1 V supply. Its 432‑VFBGA (15×15) footprint and 512M × 64 organization make it appropriate for compact, soldered memory implementations.
This device is suitable for engineers and procurement teams targeting mobile and embedded systems that need a balance of density, performance, and low-voltage operation, with an operating temperature range that covers many commercial and industrial deployments.
If you would like pricing, availability, or to request a quote for the MT53D512M64D4NW-053 WT ES:D TR, please contact sales to discuss your requirements and delivery options.
