MT53D512M64D4NW-046 WT ES:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 432VFBGA |
|---|---|
| Quantity | 1,139 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4NW-046 WT ES:D – IC DRAM 32GBIT 2.133GHZ 432VFBGA
The MT53D512M64D4NW-046 WT ES:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and supports high-speed operation at a 2.133 GHz clock frequency.
Designed for compact, high-density memory implementations, the device operates at a 1.1 V supply and is supplied in a 432‑VFBGA (15 × 15 mm) package with an operating temperature range of -30°C to 85°C (TC).
Key Features
- Memory Type & Technology Mobile LPDDR4 SDRAM implementation providing volatile DRAM functionality at 32 Gbit capacity.
- Density & Organization 32 Gbit capacity configured as 512M × 64 to support high-density memory arrays.
- Performance Supports a clock frequency of 2.133 GHz for high-speed memory transfers.
- Power Low-voltage operation at a 1.1 V supply to align with modern mobile/embedded power domains.
- Package 432‑VFBGA package in a 15 × 15 mm footprint for compact board-level integration.
- Temperature Range Specified operating temperature of -30°C to 85°C (TC) for a range of environmental conditions.
Typical Applications
- Mobile devices: Used as high-density LPDDR4 memory in space-constrained mobile and handheld designs that require 2.133 GHz operation.
- Embedded systems: Provides volatile memory for embedded platforms where a 15 × 15 mm VFBGA package and 32 Gbit density are required.
- Compact memory modules: Suitable for multi-die or stacked memory solutions that leverage 512M × 64 organization and a 1.1 V supply.
Unique Advantages
- High density (32 Gbit): Enables significant memory capacity in a single device to reduce board-level component count.
- High-speed operation: 2.133 GHz clock frequency supports demanding memory bandwidth requirements.
- Low-voltage supply: 1.1 V operation aligns with modern power budgets for mobile and embedded designs.
- Compact package footprint: 432‑VFBGA (15 × 15 mm) allows high-density integration in constrained board areas.
- Wide operating temperature: Specified -30°C to 85°C (TC) supports deployment across varied thermal environments.
Why Choose IC DRAM 32GBIT 2.133GHZ 432VFBGA?
This Mobile LPDDR4 DRAM device combines high density, high-speed operation, and low-voltage supply in a compact 432‑VFBGA package, making it suitable for engineers building mobile and embedded systems that require significant on-board memory in a small footprint. The 512M × 64 organization and 2.133 GHz clock support designs targeting elevated memory bandwidth within LPDDR4 architectures.
The specified operating range and standard VFBGA packaging provide a predictable integration path for memory subsystems where capacity, speed, and board space are key constraints.
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