MT53D512M64D4CR-053 WT:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 465 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4CR-053 WT:D – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53D512M64D4CR-053 WT:D is a 32 Gbit volatile memory device based on Mobile LPDDR4 SDRAM architecture. It is organized as 512M × 64 and is supplied by Micron Technology Inc.
Designed for applications that require high-frequency mobile DRAM, the device operates at a clock frequency of 1.866 GHz and at a supply voltage of 1.1 V, with an operating temperature range of -30°C to 85°C. The product name specifies an FBGA package format.
Key Features
- Memory Core Mobile LPDDR4 SDRAM architecture providing volatile DRAM storage.
- Capacity & Organization 32 Gbit total capacity organized as 512M × 64 for wide data-path implementations.
- Performance Rated clock frequency of 1.866 GHz to support high-rate memory access patterns.
- Power Single supply voltage of 1.1 V for LPDDR4-class low-voltage operation.
- Temperature Range Specified operating temperature from -30°C to 85°C (TC).
- Package FBGA package format as indicated in the product name.
Typical Applications
- Mobile devices — Use as on-board LPDDR4 memory where 32 Gbit density and 1.866 GHz operation are required.
- Portable computing modules — High-frequency DRAM option for compact, power-sensitive systems operating at 1.1 V.
- High-speed embedded memory systems — Wide 512M × 64 organization supports designs needing broad data-path memory.
Unique Advantages
- High density capacity: 32 Gbit enables larger in-system memory footprints without multiple devices.
- Wide data organization: 512M × 64 arrangement provides a broad data bus for efficient data transfers.
- High-frequency operation: 1.866 GHz clocking supports higher bandwidth requirements.
- Low-voltage operation: 1.1 V supply aligns with LPDDR4 power profiles for reduced power draw relative to higher-voltage alternatives.
- Extended operating temperature: -30°C to 85°C rating fits designs that require broader thermal tolerance.
- Recognized manufacturer: Produced by Micron Technology Inc., identified in the product listing.
Why Choose MT53D512M64D4CR-053 WT:D?
The MT53D512M64D4CR-053 WT:D positions itself as a high-density, high-frequency LPDDR4 DRAM option for designs that need 32 Gbit of volatile memory in an FBGA form factor. Its 512M × 64 organization, 1.866 GHz clock rate, and 1.1 V supply make it suited to systems balancing bandwidth and low-voltage operation.
This device is appropriate for engineers and procurement teams specifying mobile LPDDR4 memory for portable and embedded platforms that require a defined operating temperature range and a single-supply low-voltage interface. Its specifications provide clear metrics for system integration and thermal planning.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT53D512M64D4CR-053 WT:D.
