MT53D512M64D4HR-053 WT:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 366WFBGA |
|---|---|
| Quantity | 940 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (12x12.7) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4HR-053 WT:D – IC DRAM 32GBIT 1.866GHZ 366WFBGA
The MT53D512M64D4HR-053 WT:D is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM architecture. It operates at a clock frequency of 1.866 GHz and uses a 1.1 V supply, targeting designs that require LPDDR4 memory in a compact BGA package.
Packaged in a 366-WFBGA (12×12.7) and specified for an operating temperature range of -30°C to 85°C (TC), this Micron Technology Inc. component is suited for mobile and embedded applications where density, form factor, and LPDDR4 operation are required.
Key Features
- Memory Core and Architecture Mobile LPDDR4 SDRAM technology; memory organized as 512M × 64 delivering a total of 32 Gbit of volatile memory.
- Clock Performance Rated clock frequency of 1.866 GHz to match systems designed around this operating point.
- Power Operates from a 1.1 V supply consistent with LPDDR4 low-voltage operation.
- Package 366-WFBGA package, dimensions 12×12.7 mm, for compact board-level integration.
- Memory Format DRAM; volatile memory suitable for system memory implementations.
- Environmental Range Specified operating temperature range: -30°C to 85°C (TC).
Typical Applications
- Mobile devices — LPDDR4 architecture and 1.866 GHz operation support memory subsystems in mobile hardware where LPDDR4 is required.
- Embedded systems — high-density 32 Gbit DRAM for embedded designs that need compact memory solutions.
- Compact module integration — 366-WFBGA package enables inclusion in space-constrained modules and boards requiring high memory density.
Unique Advantages
- High capacity: 32 Gbit device provides substantial memory density in a single DRAM package.
- LPDDR4 architecture: Mobile LPDDR4 SDRAM technology aligns with designs targeting that DRAM standard.
- Targeted clock rate: 1.866 GHz rating lets designers select a device matched to that operating frequency.
- Low-voltage operation: 1.1 V supply supports lower-voltage system designs typical of LPDDR4 implementations.
- Compact BGA footprint: 366-WFBGA (12×12.7) helps minimize board area for high-density memory requirements.
- Extended operating temperature: -30°C to 85°C (TC) supports use across a range of environmental conditions.
Why Choose MT53D512M64D4HR-053 WT:D?
The MT53D512M64D4HR-053 WT:D positions itself as a high-density LPDDR4 DRAM from Micron Technology Inc. with a 1.866 GHz clock rating and 1.1 V operation. Its 32 Gbit capacity and 366-WFBGA package make it appropriate for designs that prioritize memory density and compact form factor within LPDDR4 architectures.
This device is suited for engineers and procurement teams integrating LPDDR4 memory into mobile and embedded platforms that require the specified clock frequency, voltage, package, and operating temperature range. Selecting this part enables straightforward inclusion of a single-device high-capacity DRAM in compatible system designs.
Request a quote or submit an inquiry to evaluate MT53D512M64D4HR-053 WT:D for your project procurement or design validation needs.
