MT53D512M64D4RQ-053 WT:E

The MT53D512M64D4RQ-053 WT:E is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It combines high density and high-frequency operation in a compact 556‑WFBGA package for space-constrained memory subsystems.

Typical use cases include mobile and handheld systems and other compact designs that require high-bandwidth memory at low operating voltage, with an emphasis on integration and performance efficiency.

Key Features

• Core / Technology Mobile LPDDR4 SDRAM architecture for standard low-power DRAM operation.
• Density & Organization 32 Gbit memory organized as 512M × 64, providing a single-device high-capacity option.
• Performance Rated clock frequency of 1.866 GHz for high-bandwidth memory access.
• Power 1.1 V supply voltage to support low-voltage system designs.
• Package 556‑WFBGA package with a 12.4 × 12.4 mm footprint for compact board-level integration.
• Memory Format DRAM (volatile) memory type suitable for system main memory or high-speed buffering.
• Operating Temperature Specified operating range from −30°C to 85°C (TC) to support a range of environmental conditions.

Typical Applications

• Mobile and handheld systems — High-density LPDDR4 memory for compact devices that require a small footprint and elevated data rates.
• High-bandwidth consumer electronics — Provides 1.866 GHz operation and 32 Gbit capacity for systems needing sustained memory throughput.
• Embedded and compact systems — Compact 556‑WFBGA package and low 1.1 V supply make it suitable for space- and power-constrained designs.

Unique Advantages

• High density in a single device: 32 Gbit capacity reduces the need for multiple DRAM packages on board.
• High-frequency capability: 1.866 GHz clocking supports high-bandwidth memory operations.
• Low-voltage operation: 1.1 V supply helps lower system power consumption compared with higher-voltage alternatives.
• Compact package footprint: 556‑WFBGA (12.4 × 12.4 mm) enables dense PCB layouts and space savings.
• Standard memory organization: 512M × 64 arrangement simplifies address mapping and system integration.
• Extended operating range: −30°C to 85°C operational specification supports a variety of environmental conditions.

Why Choose MT53D512M64D4RQ-053 WT:E?

The MT53D512M64D4RQ-053 WT:E positions itself as a high-density, high-frequency LPDDR4 DRAM option for designs that require compact packaging and efficient low-voltage operation. Its 32 Gbit capacity and 1.866 GHz clock frequency deliver a balance of capacity and bandwidth suitable for mobile and space-constrained memory subsystems.

Designers targeting compact, high-throughput applications will find the device’s 556‑WFBGA package and −30°C to 85°C operating range advantageous for integration and environmental robustness. The standard 512M × 64 organization offers predictable memory mapping for system planning and scalability.

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