MT53D512M64D8HR-053 WT:B TR

The MT53D512M64D8HR-053 WT:B TR is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology, offering a 32 Gbit density organized as 512M × 64. It operates at a clock frequency of 1.866 GHz and uses a 1.1 V supply.

Packaged in a compact 366‑WFBGA (12 × 12.7 mm) and rated for operation from −30 °C to 85 °C (TC), this Micron Technology Inc. part is targeted at designs that require high-density, low-voltage mobile LPDDR4 memory in space-constrained assemblies.

Key Features

• Memory Core 32 Gbit DRAM organized as 512M × 64, implemented in mobile LPDDR4 SDRAM technology.
• Performance Rated clock frequency of 1.866 GHz to support high-throughput memory operation.
• Power 1.1 V nominal supply voltage consistent with low-voltage mobile DRAM requirements.
• Package & Integration 366‑WFBGA package with supplier device package dimensions 12 × 12.7 mm for compact board-level integration.
• Operating Temperature Specified to operate across −30 °C to 85 °C (TC), supporting extended environmental ranges.
• Memory Format Volatile DRAM suitable for system memory implementations using LPDDR4 architecture.

Typical Applications

• Mobile devices — High-density LPDDR4 memory for handheld and mobile systems requiring compact packages and low-voltage operation.
• Portable consumer electronics — On-board DRAM for tablets, wearables, or media devices where board area and power are constrained.
• Compact memory subsystems — High-capacity memory building blocks for space-constrained modules and integrated platforms.
• Systems operating in varied temperatures — Designs that require reliable operation across −30 °C to 85 °C.

Unique Advantages

• High-density memory capacity: 32 Gbit capacity in a single device enables larger system memory without multiple components.
• High clock performance: 1.866 GHz rated frequency supports higher data throughput demands within LPDDR4 architectures.
• Low-voltage operation: 1.1 V supply reduces power draw compared to higher-voltage alternatives, supporting energy-sensitive designs.
• Compact footprint: 366‑WFBGA (12 × 12.7 mm) package minimizes PCB area for integration into tight form-factor assemblies.
• Extended temperature range: −30 °C to 85 °C rating supports deployment in a wide range of environmental conditions.
• Standard memory organization: 512M × 64 arrangement simplifies address and data interfacing for system designers.

Why Choose IC DRAM 32GBIT 1.866GHZ 366WFBGA?

The MT53D512M64D8HR-053 WT:B TR from Micron Technology Inc. delivers a combination of high density, mobile LPDDR4 architecture, and low-voltage operation suitable for designs that prioritize capacity, bandwidth, and compact integration. Its 1.866 GHz clock rating and 512M × 64 organization make it a straightforward choice when scaling system memory without expanding board complexity.

This device is well suited for engineers developing space-constrained, power-sensitive platforms that require reliable operation across −30 °C to 85 °C. Its package and electrical characteristics support compact memory subsystem implementations where higher memory capacity and low-voltage operation are key design drivers.

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