MT53E1G32D2FW-046 AAT:B

The MT53E1G32D2FW-046 AAT:B is a 32 Gbit volatile DRAM device based on Mobile LPDDR4X technology with a parallel memory interface and a 1G × 32 organization. It delivers high-density volatile storage with a 2.133 GHz clock frequency and a 3.5 ns access time for designs that require fast memory access and compact board-level integration.

Targeted for automotive and mobile low-power systems, the device combines automotive-grade qualification (AEC-Q100) and a wide operating temperature range (−40°C to 105°C TC), supporting designs that demand temperature robustness and industry qualification.

Key Features

• Memory Core 32 Gbit DRAM organized as 1G × 32 for high-density volatile storage.
• Technology Mobile LPDDR4X architecture providing the specified low-power DRAM technology.
• Performance 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word page) for fast read/write responsiveness.
• Power Operates from a 1.06 V to 1.17 V supply range to support low-voltage system designs.
• Interface Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Package 200‑TFBGA package (10 × 14.5 mm) for compact board footprint and BGA mounting.
• Reliability & Temperature AEC‑Q100 qualification and an operating temperature range of −40°C to 105°C (TC) for automotive-grade thermal performance.

Typical Applications

• Automotive systems Automotive-grade qualification and wide temperature range make the device applicable where robust volatile memory is required in vehicle electronics.
• Mobile low-power devices Mobile LPDDR4X technology and low-voltage operation suit compact, power-conscious designs that need high-density DRAM.
• Embedded memory subsystems High-density 32 Gbit capacity and parallel interface enable use as a primary volatile memory component in embedded platforms.

Unique Advantages

• High density (32 Gbit): Enables greater memory capacity in a single device footprint to reduce BOM count for high-capacity designs.
• Automotive-qualified: AEC‑Q100 qualification and −40°C to 105°C operating range provide traceable suitability for automotive-grade deployments.
• High-speed operation: 2.133 GHz clock and 3.5 ns access time support applications requiring fast memory access and throughput.
• Low-voltage operation: 1.06 V to 1.17 V supply range helps reduce system power consumption in low-power designs.
• Compact BGA package: 200‑TFBGA (10 × 14.5 mm) offers a small board footprint for space-constrained applications.
• Deterministic write timing: 18 ns write cycle time (word page) provides a defined metric for memory write planning in system design.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

IC DRAM 32GBIT PAR 200TFBGA delivers a combination of high density, low-voltage operation and defined high-speed timing in a compact 200‑TFBGA package. Its Mobile LPDDR4X architecture and parallel interface make it suitable for designs that need fast volatile memory with a small board footprint.

With AEC‑Q100 qualification and a wide operating temperature range, this device is positioned for customers requiring automotive-grade reliability alongside energy-efficient, high-capacity memory. It is appropriate for design teams focused on scalability, thermal robustness, and predictable performance metrics.

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