MT53E1G32D2FW-046 AAT:C

The MT53E1G32D2FW-046 AAT:C from Micron Technology Inc. is a 32 Gbit volatile DRAM organized as 1G × 32 using mobile LPDDR4X SDRAM architecture. It provides a parallel memory interface with high-frequency operation and is offered in a 200‑TFBGA (10 × 14.5 mm) package.

Designed for applications requiring high-density, high-speed memory with extended temperature capability, the device includes AEC‑Q100 qualification and an operating temperature range of −40 °C to 105 °C, supporting automotive-grade deployment scenarios where specified.

Key Features

• Core / Memory: 32 Gbit DRAM organized as 1G × 32 in mobile LPDDR4X SDRAM architecture, providing a high-density memory footprint for parallel memory subsystems.
• Performance: Rated clock frequency of 2.133 GHz and access time of 3.5 ns for high-speed data transactions; write cycle time (word/page) specified at 18 ns.
• Power: Low-voltage operation with a supply range of 1.06 V to 1.17 V to support power-sensitive designs.
• Interface & Timing: Parallel memory interface suitable for designs that require wide data paths and deterministic timing characteristics.
• Package: 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration.
• Reliability & Qualification: AEC‑Q100 qualification and a specified operating temperature range of −40 °C to 105 °C for use in temperature-stressed environments.

Typical Applications

• Automotive systems: Memory for automotive electronic modules that require AEC‑Q100 qualified components and extended temperature operation.
• Mobile platforms: High-density LPDDR4X memory for mobile and portable architectures that leverage mobile SDRAM technology.
• Parallel memory subsystems: Use in designs needing a wide 32-bit parallel data path and high-frequency operation for buffering and fast data access.

Unique Advantages

• High-density memory: 32 Gbit capacity in a single 1G × 32 device reduces board-level component count for large memory requirements.
• High-speed operation: 2.133 GHz clock frequency and 3.5 ns access time enable fast read/write cycles for performance-sensitive designs.
• Automotive qualification: AEC‑Q100 qualification and −40 °C to 105 °C temperature rating support deployment in automotive-grade environments where specified.
• Low-voltage operation: 1.06 V to 1.17 V supply range helps lower overall system power consumption while maintaining high throughput.
• Compact package: 200‑TFBGA (10 × 14.5 mm) simplifies integration into space-constrained PCBs.

Why Choose MT53E1G32D2FW-046 AAT:C?

The MT53E1G32D2FW-046 AAT:C combines high-density LPDDR4X memory architecture with high-frequency performance and automotive-focused qualification. Its 1G × 32 organization, 2.133 GHz clock capability, and low-voltage operation make it suitable for designs that require both capacity and speed within constrained power and space budgets.

This device is positioned for engineers specifying robust, high-density parallel DRAM in environments requiring extended temperature range and AEC‑Q100 qualification. It provides a clear specification set for system designers seeking predictable timing, compact packaging, and automotive-grade reliability where applicable.

Request a quote or contact sales to discuss pricing, availability, and technical support for MT53E1G32D2FW-046 AAT:C.