MT53E1G32D2FW-046 AIT:A

The MT53E1G32D2FW-046 AIT:A is a 32 Gbit volatile DRAM device based on mobile LPDDR4X SDRAM architecture. It provides a 1G x 32 memory organization with a parallel interface targeted at designs that require high-density, high-speed volatile memory.

Designed and qualified for automotive use (AEC-Q100), this device combines a compact 200‑TFBGA (10 × 14.5 mm) package with a wide operating temperature range and defined supply voltage window to support demanding embedded and automotive applications.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM architecture with a memory organization of 1G × 32 delivering 32 Gbit of volatile DRAM capacity.
• Performance Supports a clock frequency of 2.133 GHz and a word-page write cycle time of 18 ns for predictable timing in high-speed memory operations.
• Power Operates within a supply voltage range of 1.06 V to 1.17 V, matching the specified LPDDR4X supply window for system-level power planning.
• Interface & Timing Parallel memory interface with specified write-cycle timing (18 ns) suitable for designs requiring deterministic DRAM timing.
• Package 200‑TFBGA (10 × 14.5 mm) package case for high-density board integration and compact system layouts.
• Temperature & Qualification Automotive-grade device qualified to AEC-Q100 with an operating temperature range of −40 °C to 95 °C (TC).

Typical Applications

• Automotive systems — For in-vehicle applications that require automotive-qualified volatile memory across −40 °C to 95 °C operating conditions.
• Mobile platforms — As a mobile LPDDR4X DRAM option where a 1G × 32 organization and high clock frequency are required.
• Embedded memory subsystems — For embedded designs requiring high-density parallel DRAM in a compact 200‑TFBGA package.

Unique Advantages

• Automotive-qualified design: AEC-Q100 qualification and an automotive grade designation support deployment in automotive environments.
• High-density memory: 32 Gbit capacity in a single 1G × 32 device reduces board-level part count for high-capacity designs.
• High-speed operation: 2.133 GHz clock frequency and 18 ns write-cycle time enable high-throughput memory operations.
• Compact package: 200‑TFBGA (10 × 14.5 mm) footprint helps conserve PCB area in space-constrained systems.
• Defined low-voltage operation: Narrow supply voltage range of 1.06 V–1.17 V aids power budgeting and system design consistency.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

IC DRAM 32GBIT PAR 200TFBGA delivers a combination of automotive qualification, high density, and defined high-speed operation suitable for designers building automotive and embedded systems that require reliable volatile memory. Its LPDDR4X architecture, compact 200‑TFBGA package, and specified operating and supply ranges make it appropriate for systems where space, timing predictability, and qualification matter.

This device is well suited to teams designing automotive-grade and mobile/embedded platforms that need scalable DRAM capacity, clear electrical and timing specifications, and vendor-backed qualification for use across a wide temperature range.

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