MT53E1G32D2FW-046 AIT:B TR

The MT53E1G32D2FW-046 AIT:B TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM technology with a parallel memory interface. It delivers high-density, low-voltage memory in a compact 200‑TFBGA (10 × 14.5 mm) package suitable for automotive and mobile-oriented designs.

With an operating clock frequency of 2.133 GHz, AEC-Q100 qualification, and an extended temperature range, this device targets applications that require automotive-grade memory density, performance, and environmental robustness.

Key Features

• Core / Memory: 32 Gbit capacity organized as 1G × 32, implemented as DRAM in Mobile LPDDR4X SDRAM technology for high-density system memory.
• Performance: Rated clock frequency of 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns to support high-speed memory operations.
• Power: Low-voltage operation with a supply range of 1.06 V to 1.17 V to support reduced power consumption in energy‑sensitive designs.
• Automotive Qualification & Temperature: AEC‑Q100 qualified and specified for an operating temperature range of −40 °C to 95 °C (TC), supporting automotive environmental requirements.
• Package & Footprint: 200‑TFBGA package (10 × 14.5 mm) providing a compact surface-mount solution for space-constrained boards.
• Interface & Format: Parallel memory interface in a volatile DRAM format suitable for high-density system memory applications.

Typical Applications

• Automotive systems — Automotive-grade LPDDR4X memory for electronic control units, infotainment modules, and other in-vehicle systems requiring AEC‑Q100 qualification and extended temperature capability.
• Mobile and handheld devices — High-density 32 Gbit LPDDR4X storage for compact mobile and embedded platforms that benefit from low-voltage operation and a small-package footprint.
• Embedded compute modules — Parallel DRAM memory for compute and multimedia modules where high bandwidth and compact packaging are required.

Unique Advantages

• High memory density: 32 Gbit capacity (1G × 32) enables large in-system memory arrays without increasing PCB area significantly.
• High-speed LPDDR4X operation: 2.133 GHz clock frequency with 3.5 ns access time supports demanding throughput requirements.
• Automotive-grade qualification: AEC‑Q100 qualification and a −40 °C to 95 °C temperature range provide verified robustness for automotive deployments.
• Low-voltage design: 1.06 V to 1.17 V supply reduces power draw, supporting energy-sensitive and thermally constrained designs.
• Compact package: 200‑TFBGA (10 × 14.5 mm) simplifies integration into space-limited system boards.

Why Choose MT53E1G32D2FW-046 AIT:B TR?

The MT53E1G32D2FW-046 AIT:B TR combines high-density LPDDR4X memory architecture with automotive-grade qualification to deliver a compact, low-voltage DRAM solution for systems that require both performance and environmental robustness. Its 2.133 GHz operation and fast access characteristics make it suitable for applications demanding sustained memory bandwidth.

This device is well suited to designers of automotive and mobile/embedded systems seeking a manufacturer-backed, qualified memory component that balances density, speed, and thermal tolerance in a small form-factor package.

Request a quote or contact sales to discuss availability, pricing, and qualification details for the MT53E1G32D2FW-046 AIT:B TR.