MT53E1G32D2FW-046 AUT:A

The MT53E1G32D2FW-046 AUT:A is a 32 Gbit volatile DRAM device built on Mobile LPDDR4X SDRAM technology. It provides a 1G × 32 memory organization with a parallel interface and is supplied by Micron Technology Inc.

This device targets applications requiring high-density parallel DRAM with a 2.133 GHz clock operating at a 1.06 V to 1.17 V supply range. It is offered in a 200-TFBGA package and is qualified to AEC-Q100 with an operating temperature range of -40°C to 125°C (TC).

Key Features

• Memory Core & Organization Mobile LPDDR4X SDRAM architecture with a 1G × 32 organization delivering 32 Gbit of DRAM capacity in a parallel memory format.
• Performance Clock frequency specified at 2.133 GHz with a write cycle time (word page) of 18 ns for timing characterization.
• Power Operates from a 1.06 V to 1.17 V supply range compatible with LPDDR4X voltage requirements.
• Interface Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Package Supplied in a 200-TFBGA package (10x14.5) for compact board-level integration.
• Temperature & Qualification Automotive-grade device qualified to AEC-Q100 and rated for an operating temperature range of -40°C to 125°C (TC).

Typical Applications

• Automotive systems — AEC-Q100 qualification and the -40°C to 125°C temperature range support use in automotive electronic designs that require parallel DRAM capacity.
• Mobile platforms — Mobile LPDDR4X technology and the 32 Gbit organization address mobile platform memory requirements where LPDDR4X architecture is specified.
• Parallel memory subsystems — Suited to systems that require a 1G × 32 parallel DRAM interface and high-density memory integration.

Unique Advantages

• AEC-Q100 qualification: Explicit AEC-Q100 rating and Automotive grade classification enable deployment in temperature- and reliability-sensitive automotive environments.
• High density — 32 Gbit: Large memory capacity in a single DRAM device reduces the need for multiple components to achieve required system memory.
• LPDDR4X mobile architecture: Mobile LPDDR4X SDRAM technology supports designs specifying this memory standard and interface.
• High clock capability: 2.133 GHz clock frequency and 18 ns write cycle time provide defined timing characteristics for system memory performance planning.
• Tight voltage range: 1.06 V to 1.17 V supply specification aligns with LPDDR4X voltage requirements for predictable power integration.
• Compact 200-TFBGA package: 200-TFBGA (10x14.5) package enables compact PCB layout for space-constrained designs.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AUT:A positions itself as a high-density, automotive-qualified LPDDR4X DRAM option for designs that require a 1G × 32 parallel memory organization. Its combination of 32 Gbit capacity, defined 2.133 GHz clocking, and a narrow supply voltage range provides clear electrical and timing parameters for system integration.

This device is suitable for designers specifying automotive-grade LPDDR4X memory or those integrating compact, high-capacity parallel DRAM in mobile or embedded platforms that require AEC-Q100 qualification and extended temperature operation.

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