MT53E1G32D2FW-046 AUT:C

The MT53E1G32D2FW-046 AUT:C is a 32 Gbit volatile DRAM device built on Mobile LPDDR4X SDRAM technology with a 1G × 32 memory organization and a parallel memory interface. It targets applications requiring high-density, high-speed memory in a compact 200-TFBGA package.

Key attributes include a 2.133 GHz clock frequency, low-voltage operation (1.06 V–1.17 V), AEC‑Q100 qualification and a wide operating temperature range (−40 °C to 125 °C), making it suitable for demanding environments and long-term deployments.

Key Features

• Core / Technology Mobile LPDDR4X SDRAM architecture providing the underlying DRAM functionality for high-density memory applications.
• Memory Capacity & Organization 32 Gbit capacity organized as 1G × 32, enabling large on-board storage in a single device.
• Performance Clock frequency of 2.133 GHz with a documented access time of 3.5 ns and a write cycle time (word page) of 18 ns for responsive memory operations.
• Power Low-voltage supply range from 1.06 V to 1.17 V to support energy-sensitive system designs.
• Interface Parallel memory interface suitable for designs that require parallel DRAM connectivity.
• Package 200-TFBGA (10 × 14.5 mm) supplier device package providing a compact footprint for board-level integration.
• Qualification & Temperature Range AEC‑Q100 qualification and an operating temperature range of −40 °C to 125 °C for qualification-backed performance across extended temperature extremes.

Typical Applications

• Automotive systems Memory for in-vehicle modules where AEC‑Q100 qualification and −40 °C to 125 °C operation are required.
• Mobile and handheld devices High-density Mobile LPDDR4X SDRAM suitable for compact systems needing 32 Gbit memory in a small package.
• Embedded high-performance modules Parallel 1G × 32 interface supports designs that require wide data paths and fast access times.

Unique Advantages

• High density in a single device: 32 Gbit capacity (1G × 32) reduces the number of memory devices required on a board.
• High-speed operation: 2.133 GHz clock frequency and 3.5 ns access time provide fast memory responsiveness for bandwidth-sensitive tasks.
• Automotive qualification: AEC‑Q100 qualification and extended −40 °C to 125 °C rating support deployment in temperature-challenging environments.
• Low-voltage operation: 1.06 V–1.17 V supply range helps reduce system power consumption while maintaining SDRAM performance.
• Compact package footprint: 200‑TFBGA (10 × 14.5 mm) package simplifies board integration where space is constrained.
• Parallel interface: 1G × 32 parallel configuration accommodates systems that utilize wide data buses for throughput.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AUT:C combines 32 Gbit density, Mobile LPDDR4X SDRAM architecture and a parallel 1G × 32 interface in a compact 200‑TFBGA package, delivering a balance of capacity and performance. Its 2.133 GHz clock, sub-4 ns access time and low-voltage operation make it appropriate for designs that require high-speed memory with power sensitivity.

With AEC‑Q100 qualification and an operating range of −40 °C to 125 °C, this device is positioned for long-term, temperature-extreme deployments such as automotive and industrial applications that demand qualified components and robust thermal margins.

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