MT53E1G32D2FW-046 IT:A

The MT53E1G32D2FW-046 IT:A is a 32 Gbit volatile DRAM implemented in Mobile LPDDR4X SDRAM architecture. It is organized as 1G x 32 and provides a parallel memory interface for high-speed, low-voltage memory applications.

This device targets designs that require dense, fast DRAM in a compact 200-TFBGA (10 × 14.5 mm) package, with operation across an extended temperature range for embedded and mobile environments.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM technology in a 1G × 32 organization delivering a 32 Gbit memory capacity.
• Clock & Timing 2.133 GHz clock frequency with a write cycle time (word page) of 18 ns to support fast data transactions.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V suitable for power-sensitive designs.
• Interface Parallel memory interface for direct integration with parallel memory controllers and system architectures.
• Package Supplied in a 200-TFBGA package (10 × 14.5 mm) for high-density board-level integration.
• Operating Temperature Rated for −40 °C to 95 °C (TC) to accommodate a wide range of environmental conditions.

Typical Applications

• Mobile devices — Memory capacity and LPDDR4X architecture suited for handheld and mobile system memory needs.
• Portable electronics — Compact 200-TFBGA package and low-voltage operation support space- and power-constrained designs.
• Embedded systems — High-density DRAM for embedded platforms requiring fast parallel memory access and wide temperature operation.

Unique Advantages

• High memory density: 32 Gbit capacity in a single 1G × 32 device reduces the need for multiple components to meet large memory requirements.
• Fast clocking: 2.133 GHz clock frequency and 18 ns write cycle time enable rapid data throughput for time-sensitive tasks.
• Low-voltage operation: 1.06 V to 1.17 V supply range lowers power consumption in battery-powered and energy-conscious systems.
• Compact package: 200-TFBGA (10 × 14.5 mm) form factor supports high-density PCB layouts and integration into space-limited products.
• Wide temperature range: −40 °C to 95 °C (TC) supports deployment in environments with broad thermal variation.
• Parallel interface: Direct parallel memory interface simplifies integration with parallel memory controllers and existing board architectures.

Why Choose MT53E1G32D2FW-046 IT:A?

The MT53E1G32D2FW-046 IT:A combines LPDDR4X SDRAM architecture, a 32 Gbit density, and a 2.133 GHz clock frequency in a compact 200-TFBGA package to address designs that demand high-capacity, low-voltage memory with fast access times. Its extended operating temperature range and parallel interface make it suitable for embedded and mobile systems where space, power, and thermal margins are critical.

This device is well suited for engineers and purchasing teams specifying dense DRAM for portable and embedded products that require predictable electrical and thermal performance while minimizing board footprint.

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