MT53E1G32D2FW-046 IT:C
| Part Description |
IC DRAM 32GBIT PAR 200TFBGA |
|---|---|
| Quantity | 249 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 200-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53E1G32D2FW-046 IT:C – IC DRAM 32GBIT PAR 200TFBGA
The MT53E1G32D2FW-046 IT:C is a 32 Gbit DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 1G × 32 memory organization with a parallel memory interface and is supplied in a 200-TFBGA package (10 × 14.5 mm).
This device targets designs that require high-density LPDDR4 memory in a compact BGA footprint, offering a defined clock specification for memory system integration.
Key Features
- Core Technology Mobile LPDDR4 SDRAM architecture as specified in the product data.
- Density & Organization 32 Gbit total capacity arranged as 1G × 32 for straightforward bus organization and integration.
- Clock Frequency Rated clock frequency of 2.133 GHz for system timing reference.
- Interface Parallel memory interface suitable for parallel DRAM subsystem designs.
- Package 200-TFBGA package case with supplier device package dimensions 10 × 14.5 mm, supporting surface-mount PCB integration.
- Memory Format DRAM device optimized for mobile LPDDR4 implementations.
Typical Applications
- Mobile Memory Subsystems Use as high-density LPDDR4 DRAM in mobile device memory stacks where Mobile LPDDR4 architecture is required.
- Compact Board Designs Integration on space-constrained PCBs using the 200-TFBGA (10 × 14.5 mm) package.
- High-Capacity Memory Modules Deployment where 32 Gbit density and 1G × 32 organization meet module capacity requirements.
Unique Advantages
- High Density Integration: 32 Gbit capacity enables larger memory pools within a single DRAM device.
- Defined Data Organization: 1G × 32 arrangement simplifies parallel interface design and address mapping.
- Specified Clock Performance: 2.133 GHz clock frequency provides a clear timing parameter for system integration.
- Compact BGA Package: 200-TFBGA (10 × 14.5 mm) footprint supports space-efficient surface-mount assembly.
- Mobile LPDDR4 Architecture: Technology designation matches mobile LPDDR4 system requirements where that DRAM type is specified.
Why Choose IC DRAM 32GBIT PAR 200TFBGA?
The MT53E1G32D2FW-046 IT:C is positioned as a high-density Mobile LPDDR4 DRAM device in a compact 200-TFBGA package, providing clear specifications for capacity, organization, interface type, and clock frequency. It is suited to designs that require a 32 Gbit parallel DRAM element with a defined 1G × 32 organization.
Designers targeting mobile LPDDR4 implementations or compact memory modules can leverage this device’s stated capacity and package dimensions for integration and layout planning.
Request a quote or contact sales to discuss availability, pricing, and suitability for your project requirements.
