MT53E1G32D2FW-046 WT:A TR
| Part Description |
IC DRAM 32GBIT PAR 200TFBGA |
|---|---|
| Quantity | 1,495 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G32D2FW-046 WT:A TR – 32 Gbit Parallel Mobile LPDDR4X DRAM, 200‑TFBGA
The MT53E1G32D2FW-046 WT:A TR is a 32 Gbit volatile DRAM device based on SDRAM - Mobile LPDDR4X technology. It is organized as 1G × 32 with a parallel memory interface and is offered in a 200‑TFBGA (10 × 14.5) package.
This device targets designs that require high-density, high-frequency parallel DRAM in a compact BGA footprint, providing defined electrical and timing characteristics for system integration.
Key Features
- Memory Core & Technology Volatile DRAM implemented as SDRAM - Mobile LPDDR4X with a 32 Gbit capacity organized as 1G × 32.
- Interface Parallel memory interface suitable for parallel DRAM architectures.
- Performance Clock frequency specified at 2.133 GHz with a write cycle time (word page) of 18 ns.
- Power Voltage supply range defined as 1.06 V to 1.17 V for device operation.
- Package 200‑TFBGA package (10 × 14.5 mm) for board-level integration and compact mounting.
- Operating Temperature Rated for operation from -25°C to 85°C (TC).
- Memory Format & Mounting DRAM memory format; mounting type listed as volatile.
Unique Advantages
- High-density 32 Gbit capacity: Consolidates large memory requirements into a single device, reducing the number of memory packages on board.
- Parallel LPDDR4X architecture: 1G × 32 organization with a parallel interface enables straightforward integration into parallel memory subsystems.
- High-frequency operation: 2.133 GHz clock frequency combined with an 18 ns write cycle time supports high-throughput memory access patterns.
- Tight supply range: Specified 1.06 V to 1.17 V voltage supply range simplifies power-budget planning and supply design.
- Compact BGA footprint: 200‑TFBGA (10 × 14.5) package provides a small board footprint for space-constrained layouts.
- Extended temperature rating: Operation from -25°C to 85°C (TC) supports a broader set of ambient conditions.
Why Choose IC DRAM 32GBIT PAR 200TFBGA?
The MT53E1G32D2FW-046 WT:A TR from Micron Technology Inc. combines mobile LPDDR4X SDRAM technology with a high-density 32 Gbit organization and a parallel interface, delivering defined high-frequency performance and compact packaging for system-level memory integration. Its specified electrical, timing, and thermal parameters provide clear design targets for embedded and system designers.
This device is suited for designs that require a single-package, high-capacity parallel DRAM solution with a compact 200‑TFBGA footprint and controlled supply and timing characteristics. The documented voltage range, clock frequency, and operating temperature help support predictable integration and long-term deployment planning.
Request a quote or submit a pricing inquiry to check availability, lead times, and ordering options for the MT53E1G32D2FW-046 WT:A TR.
