MT53E1G32D2FW-046 WT:B

The MT53E1G32D2FW-046 WT:B is a 32 Gbit LPDDR4 mobile SDRAM device organized as 1G × 32 with a parallel memory interface. It implements a 16n prefetch DDR architecture and delivers high-bandwidth operation at a 2133 MHz clock rate (4266 Mb/s data rate per pin).

Designed for space-constrained, high-throughput memory subsystems, this device combines low-voltage operation, advanced refresh and power features, and a compact 200-ball TFBGA (10 mm × 14.5 mm × 1.1 mm) package for embedded and mobile memory implementations.

Key Features

• Memory Core & Architecture 32 Gbit LPDDR4 SDRAM organized as 1G × 32 with 16n prefetch DDR architecture and 8 internal banks per channel for concurrent operation.
• Performance 2133 MHz clock rate delivering a 4266 Mb/s data rate per pin and up to 8.5 GB/s per die (x16 channel) as specified in the datasheet.
• Timing Write cycle time (word page) of 18 ns and access time of 3.5 ns; programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32).
• Low-Voltage Power Options Ultra-low-voltage core and I/O supplies with datasheet-specified rails: VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V (device specification lists 1.06–1.17 V), and VDDQ options of 0.57–0.65 V or 1.06–1.17 V.
• Power Management & Refresh Directed per-bank refresh, partial-array self refresh (PASR), on-chip temperature sensor for self-refresh control, and clock-stop capability to optimize power usage and refresh scheduling.
• Signal & I/O Features Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, and programmable output drive strength (DS).
• Package & Thermal 200-ball TFBGA (10 mm × 14.5 mm × 1.1 mm, Ø0.40 SMD) package (FW variant) with an operating temperature range of −25°C to +85°C (WT temperature grade).
• Standards & Compliance LPDDR4/LPDDR4X unified product family features and RoHS-compliant packaging as noted in the datasheet.

Typical Applications

• Mobile devices — LPDDR4 mobile SDRAM technology and low-voltage operation support implementation as system memory in mobile memory subsystems.
• Compact embedded systems — 32 Gbit capacity in a 200-TFBGA (10 mm × 14.5 mm) package suits designs with tight board-space constraints.
• High-bandwidth buffers and system memory — 1G × 32 organization, 16n prefetch, and 4266 Mb/s per-pin data rates enable use where sustained throughput is required.

Unique Advantages

• High per-pin data throughput: 4266 Mb/s data rate per pin at 2133 MHz clock supports demanding memory bandwidth needs.
• Low-voltage operation: Multiple VDD rails (VDD1, VDD2, VDDQ) including ultra-low-voltage options reduce core and I/O power envelope.
• Advanced refresh control: Directed per-bank refresh and partial-array self refresh allow finer refresh scheduling and improved concurrency.
• Compact FBGA package: 200-ball TFBGA (10 mm × 14.5 mm × 1.1 mm) provides high density in a small footprint for space-limited designs.
• On-die management features: On-chip temperature sensor, programmable RL/WL, and selectable drive strength enable adaptable performance and thermal management.
• Industry-standard LPDDR4 family: Part of Micron’s LPDDR4/LPDDR4X product set, enabling consistent architecture and specification alignment within the family.

Why Choose MT53E1G32D2FW-046 WT:B?

The MT53E1G32D2FW-046 WT:B positions itself as a high-density LPDDR4 memory die that delivers mobile-class bandwidth and low-voltage operation in a compact 200-ball TFBGA package. Its combination of 1G × 32 organization, 4266 Mb/s per-pin data rates, and on-die power/refresh features make it suitable for designs that require high throughput and careful power/thermal management.

This device is appropriate for engineers specifying LPDDR4-class memory where a 32 Gbit capacity, programmable timing, and space-efficient packaging are required. As part of Micron’s LPDDR4/LPDDR4X product family, it provides a defined feature set for integration into embedded and mobile memory subsystems.

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