MT53E1G32D2FW-046 WT:A

The MT53E1G32D2FW-046 WT:A is a 32 Gbit volatile DRAM device implemented as SDRAM - Mobile LPDDR4X. It is organized as 1G x 32 with a parallel memory interface and is supplied in a 200-TFBGA (10×14.5) package.

Designed for systems that require high-density, low-voltage mobile DRAM, the device features a 2.133 GHz clock frequency, a write cycle time (word page) of 18 ns, and a supply voltage range of 1.06 V to 1.17 V. Its specified operating temperature is −25°C to 85°C (TC).

Key Features

• Memory Type & Technology Volatile DRAM implemented as SDRAM - Mobile LPDDR4X, providing mobile-class memory architecture.
• Density & Organization 32 Gbit capacity organized as 1G × 32, enabling high-density memory footprint in a single device.
• Performance 2.133 GHz clock frequency with an 18 ns write cycle time (word page) for timing-sensitive memory operations.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support power-constrained designs.
• Interface Parallel memory interface suitable for systems designed to integrate LPDDR4X memory in parallel configurations.
• Package 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration and standardized BGA mounting.
• Operating Temperature Specified operating range of −25°C to 85°C (TC) for a variety of ambient conditions.

Typical Applications

• Mobile devices — Acts as LPDDR4X SDRAM for high-density memory requirements in mobile-class hardware.
• Embedded systems — Provides a compact, high-capacity DRAM option for embedded designs requiring low-voltage operation.
• Handheld electronics — Suitable for handheld products that need a small BGA package combined with 32 Gbit memory density.

Unique Advantages

• High-density memory: 32 Gbit capacity in a single device reduces the need for multiple chips to reach desired memory sizes.
• Mobile LPDDR4X architecture: The SDRAM - Mobile LPDDR4X technology aligns with mobile-class memory requirements for compact, low-power designs.
• Low-voltage operation: 1.06 V to 1.17 V supply range supports power-sensitive applications and helps manage system power budgets.
• Compact BGA package: 200‑TFBGA (10×14.5 mm) enables space-efficient board layouts and high-density PCB integration.
• Deterministic timing: 2.133 GHz clock frequency and 18 ns write cycle time (word page) provide defined timing characteristics for system integration.
• Broad operating range: Specified −25°C to 85°C (TC) operation accommodates a range of environmental conditions.

Why Choose MT53E1G32D2FW-046 WT:A?

The MT53E1G32D2FW-046 WT:A positions itself as a high-density, mobile-class SDRAM component that balances performance and low-voltage operation in a compact 200‑TFBGA package. Its 1G × 32 organization and 32 Gbit capacity make it suitable for designs that require substantial memory capacity without expanding board footprint.

This device is appropriate for engineers and volume designers targeting mobile and embedded applications where LPDDR4X architecture, defined timing (2.133 GHz / 18 ns write cycle), and a controlled operating temperature range (−25°C to 85°C) are required. It offers a straightforward integration path for systems needing a single-chip 32 Gbit DRAM solution.

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