MT53E1G32D2FW-046 WT:B TR

The MT53E1G32D2FW-046 WT:B TR is a 32 Gbit volatile DRAM device implemented using Mobile LPDDR4 SDRAM technology with a 1G × 32 memory organization and a parallel memory interface. It is specified for high-speed operation with a 2.133 GHz clock frequency and a 3.5 ns access time, packaged in a 200‑TFBGA (10×14.5) form factor.

This device is suitable for system designs that require dense, low-voltage, high-rate volatile memory in a compact BGA package and an industry-standard parallel interface.

Key Features

• Memory Technology Mobile LPDDR4 SDRAM implemented as volatile DRAM with a total capacity of 32 Gbit organized as 1G × 32.
• Performance 2.133 GHz clock frequency and a 3.5 ns access time, with a write cycle time (word page) of 18 ns for predictable memory timing.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support lower power system designs.
• Interface Parallel memory interface suitable for integration with parallel memory controllers and subsystems.
• Package & Mounting 200‑TFBGA package (10 × 14.5 mm) for surface-mount applications requiring compact, high-density memory.
• Environmental Range Operating temperature specified from −25°C to 85°C (TC) for a range of commercial and industrial temperature conditions.

Typical Applications

• Mobile platforms: Memory subsystem for mobile devices and handheld systems benefiting from LPDDR4 architecture and low-voltage operation.
• Embedded systems: High-density volatile memory for embedded designs that require a parallel memory interface and compact BGA packaging.
• Consumer electronics: High-bandwidth buffering and temporary storage in compact devices where 32 Gbit capacity and high clock rates are required.

Unique Advantages

• High-density memory in a compact package: 32 Gbit capacity in a 200‑TFBGA (10×14.5) package conserves board area while providing substantial memory capacity.
• High-speed timing: 2.133 GHz clock and 3.5 ns access time enable faster data access and throughput where low-latency memory is needed.
• Low-voltage operation: 1.06 V–1.17 V supply range supports reduced power consumption in battery-powered or energy-conscious designs.
• Predictable write timing: 18 ns write cycle time (word page) aids in system timing analysis and memory performance planning.
• Wide operating temperature: −25°C to 85°C (TC) supports designs operating across a broad ambient range.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 WT:B TR positions itself as a high-density, low-voltage Mobile LPDDR4 DRAM option for designs that need fast, parallel-access volatile memory in a compact footprint. Its specified clock frequency, access time, and write cycle time provide measurable performance characteristics for system architects and memory subsystem designers.

This device is suited to engineers developing mobile, embedded, and consumer electronic products that require a balance of capacity, speed, and low-voltage operation, while benefiting from a standardized 200‑TFBGA package for surface-mount integration.

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