MT53E1G32D2NP-046 WT:A TR

The MT53E1G32D2NP-046 WT:A TR is a 32 Gbit DRAM device implemented in mobile LPDDR4 SDRAM architecture. It delivers a 1G x 32 memory organization with a 2.133 GHz clock frequency and operates at a 1.1 V supply.

Packaged in a compact 200-WFBGA (10 × 14.5 mm) footprint and rated for an operating temperature range of −30 °C to 85 °C, this device is targeted at space-constrained mobile and embedded applications that require high-density, low-voltage DRAM.

Key Features

• Memory Architecture Mobile LPDDR4 SDRAM technology, organized as 1G × 32 for high-density memory integration.
• Capacity 32 Gbit memory size suitable for applications requiring large DRAM capacity.
• Performance 2.133 GHz clock frequency delivering high data-rate operation consistent with LPDDR4 timing.
• Power 1.1 V nominal supply voltage for low-voltage operation.
• Package 200-WFBGA package in a 10 × 14.5 mm footprint for compact board-level integration.
• Temperature Range Operating temperature −30 °C to 85 °C for designs requiring mid-range environmental tolerance.
• Memory Format DRAM type memory suitable for volatile working memory applications.

Typical Applications

• Mobile Devices LPDDR4 technology and low-voltage operation make this device suitable for mobile platforms requiring high-density DRAM.
• Embedded Systems Compact 200-WFBGA package supports space-constrained embedded modules that need significant working memory.
• Handheld Electronics High-capacity 32 Gbit organization provides ample volatile memory for feature-rich handheld products.

Unique Advantages

• High Density in a Compact Footprint: 32 Gbit capacity in a 200-WFBGA (10 × 14.5 mm) package enables large memory integration where board area is limited.
• Low-Voltage Operation: 1.1 V supply supports reduced power consumption compared with higher-voltage alternatives.
• High Clock Rate: 2.133 GHz clock frequency supports high data-rate LPDDR4 operation for demanding memory bandwidth.
• Standard LPDDR4 Organization: 1G × 32 organization aligns with common LPDDR4 memory architectures for straightforward system integration.
• Broad Operating Range: Rated for −30 °C to 85 °C to accommodate a range of environmental conditions in mobile and embedded applications.

Why Choose MT53E1G32D2NP-046 WT:A TR?

The MT53E1G32D2NP-046 WT:A TR positions itself as a high-density LPDDR4 DRAM option combining 32 Gbit capacity, a 2.133 GHz clock rate, and a 1.1 V supply in a compact 200-WFBGA package. These characteristics simplify integration into designs that require substantial volatile memory while maintaining low-voltage operation and a small board footprint.

This device is suitable for engineers and designers developing mobile and embedded systems where dense, low-voltage DRAM and a compact package are primary requirements. Its specified operating temperature range supports deployment in a variety of mid-range environments.

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