MT53E1G32D2NP-046 WT:B
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200WFBGA |
|---|---|
| Quantity | 748 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-WFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53E1G32D2NP-046 WT:B – IC DRAM 32Gbit 2.133GHz 200-WFBGA
The MT53E1G32D2NP-046 WT:B is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 1G x 32 memory organization and operates at a clock frequency of 2.133 GHz.
Packaged in a 200-WFBGA (10 × 14.5 mm) and specified for operation from -30°C to 85°C, this device targets designs that require high-density LPDDR4 memory with low-voltage operation at 1.1 V.
Key Features
- Technology — Mobile LPDDR4 SDRAM architecture suitable for LPDDR4 memory implementations.
- Memory Capacity & Organization — 32 Gbit total capacity organized as 1G × 32 for wide data bus applications.
- Clock Frequency — Rated for 2.133 GHz operation to support high-frequency memory access.
- Power — Low-voltage operation at 1.1 V for reduced power consumption in battery-powered designs.
- Package — 200-WFBGA package (10 × 14.5 mm) for compact board-level integration.
- Operating Temperature — Specified for -30°C to 85°C (TC) for extended environmental operating range.
- Memory Format — Volatile DRAM suitable for standard DRAM use cases.
Typical Applications
- Mobile and portable devices — LPDDR4 memory for mobile platforms that require high-density, low-voltage DRAM.
- Embedded memory subsystems — Integration where 32 Gbit capacity and a 1G × 32 organization are required.
- Compact board designs — Use of the 200-WFBGA package for space-constrained layouts.
Unique Advantages
- High-density memory capacity: 32 Gbit total provides significant DRAM capacity in a single device.
- High operating frequency: 2.133 GHz rating supports high-speed memory access patterns.
- Low-voltage operation: 1.1 V supply reduces power draw in battery-powered or low-power systems.
- Compact package: 200-WFBGA (10 × 14.5 mm) offers a small footprint for compact system designs.
- Extended temperature range: -30°C to 85°C supports a broad set of operating environments.
Why Choose MT53E1G32D2NP-046 WT:B?
The MT53E1G32D2NP-046 WT:B combines high-density LPDDR4 memory organization with a 2.133 GHz operating frequency and low-voltage 1.1 V operation, providing a balance of capacity, speed, and power efficiency. Its 200-WFBGA package and extended temperature rating make it suitable for designs that require compact integration and environmental robustness.
Backed by Micron Technology Inc., this DRAM device is appropriate for engineers and procurement teams specifying LPDDR4 memory where 32 Gbit capacity, low-voltage operation, and compact packaging are key design requirements.
Request a quote or contact sales to discuss availability and volume pricing for MT53E1G32D2NP-046 WT:B.
