MT53E1G32D2NP-053 RS WT:B

IC DRAM 32GBIT FBGA
Part Description

IC DRAM 32GBIT FBGA

Quantity 134 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeN/A
Clock FrequencyN/AVoltageN/AMemory TypeN/A
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of MT53E1G32D2NP-053 RS WT:B – IC DRAM 32GBIT FBGA

The MT53E1G32D2NP-053 RS WT:B is a 32 Gbit DRAM device from Micron Technology Inc., specified as SDRAM - Mobile LPDDR4. The device is organized as 1G × 32 and is offered in an FBGA form factor.

It is targeted at designs requiring high-density mobile DRAM memory in a compact package, providing a straightforward component choice for systems that reference Mobile LPDDR4 technology and a 1G × 32 memory organization.

Key Features

  • Memory Technology Designated as SDRAM - Mobile LPDDR4, indicating the device implements LPDDR4 mobile DRAM technology.
  • Memory Size 32 Gbit total memory capacity for high-density applications.
  • Memory Organization Organized as 1G × 32, providing a 32-bit data organization.
  • Memory Format Classified as DRAM, suitable where dynamic RAM is required.
  • Package Listed in the part name as FBGA, denoting a ball grid array package format.
  • Manufacturer Supplied by Micron Technology Inc., identified by the Micron part number MT53E1G32D2NP-053 RS WT:B.

Typical Applications

  • Mobile devices — Fits designs that reference Mobile LPDDR4 memory technology and need 32 Gbit density in a compact package.
  • Compact embedded systems — Suited to space-constrained systems requiring high-density DRAM organized as 1G × 32.
  • Consumer electronics — Applicable where a DRAM component with Mobile LPDDR4 designation and 32 Gbit capacity is specified.

Unique Advantages

  • High memory density: 32 Gbit capacity supports designs that require substantial DRAM resources.
  • Mobile LPDDR4 designation: Matches mobile DRAM technology naming for designs targeting LPDDR4-based memory architectures.
  • 32-bit organization: The 1G × 32 organization provides a clear 32-bit data arrangement for system integration.
  • FBGA packaging: Identified in the part name as FBGA, offering a ball grid array package option for compact board layouts.
  • Micron part identification: Delivered under Micron Technology Inc. part number MT53E1G32D2NP-053 RS WT:B for procurement and inventory tracking.

Why Choose MT53E1G32D2NP-053 RS WT:B?

This Micron 32 Gbit DRAM device provides a clear specification set—SDRAM Mobile LPDDR4 technology, 1G × 32 organization, and FBGA package—making it suitable for engineers specifying high-density mobile DRAM components. Its defined capacity and organization simplify selection for designs that require a 32-bit DRAM memory element in a compact package.

Choose this part when your design requirements call for a 32 Gbit DRAM with Mobile LPDDR4 technology and explicit part-level identification from Micron Technology Inc.

To request a quote or discuss availability and pricing for MT53E1G32D2NP-053 RS WT:B, please contact sales or submit a request for quotation through your usual procurement channels.

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