MT53E1G32D4NQ-046 WT:E

The MT53E1G32D4NQ-046 WT:E is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 1G × 32 memory organization and a 2.133 GHz clock frequency, operating from a 1.1 V supply.

This device targets systems requiring high-density LPDDR4 memory at elevated clock rates, with an operating temperature range of −30°C to 85°C for thermal robustness in a variety of environments.

Key Features

• Memory Technology  Mobile LPDDR4 SDRAM technology delivering LPDDR4-class signaling and behavior as specified in the product data.
• Density & Organization  32 Gbit total capacity arranged as 1G × 32, supporting wide 32-bit data organization for memory subsystem design.
• Clock Performance  Rated for operation at a 2.133 GHz clock frequency to support high-speed memory transactions.
• Power  Single 1.1 V supply voltage as specified for the device, consistent with LPDDR4 low-voltage operation.
• Temperature Range  Specified operating temperature from −30°C to 85°C, enabling use across a range of thermal conditions.
• Form Factor  FBGA indicated in the product name for a ball grid array footprint suitable for compact board-level integration.

Typical Applications

• Mobile devices  Mobile LPDDR4 architecture and 1.1 V operation make the device suitable for LPDDR4 memory subsystems in mobile platforms that require high-density DRAM.
• High-speed memory subsystems  The 2.133 GHz clock frequency supports designs that require higher-frequency DRAM interfaces and throughput.
• Compact consumer electronics  FBGA form factor and 32 Gbit density provide a space-efficient memory option for compact electronics requiring large volatile storage.

Unique Advantages

• High density 32 Gbit capacity:  Provides large memory capacity in a single device, reducing the number of parts needed for high-capacity designs.
• High clock capability:  2.133 GHz operation supports higher data-rate requirements in LPDDR4-compatible systems.
• Low-voltage operation:  1.1 V supply aligns with LPDDR4 power domains to help manage system power budgets.
• Wide data organization (1G × 32):  32-bit organization simplifies integration into wide-data memory buses and controllers.
• Extended operating temperature:  Rated from −30°C to 85°C for use in environments with varying thermal conditions.
• FBGA footprint:  Ball grid array packaging supports compact board layouts and high-density assembly.

Why Choose IC DRAM 32GBIT 2.133GHZ FBGA?

The MT53E1G32D4NQ-046 WT:E positions itself as a high-density Mobile LPDDR4 SDRAM device that balances large capacity, high clock performance, and low-voltage operation. Its 1G × 32 organization and 2.133 GHz rating provide clear, verifiable parameters for designs targeting LPDDR4 memory subsystems.

This device is suitable for designers and procurement teams specifying LPDDR4 memory where 32 Gbit of volatile storage, compact FBGA packaging, and an operating range of −30°C to 85°C are required. Selecting this Micron Technology device supports scalability in memory capacity while aligning with LPDDR4 voltage and interface expectations.

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