MT53E1G32D4NQ-046 WT:F
| Part Description |
IC DRAM 32GBIT 200VFBGA |
|---|---|
| Quantity | 382 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial (Extended) | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E1G32D4NQ-046 WT:F – IC DRAM 32GBIT 200VFBGA
The MT53E1G32D4NQ-046 WT:F is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology with a 1G × 32 memory organization. It targets memory subsystems that require LPDDR4 mobile DRAM functionality delivered in a compact 200-VFBGA package.
Key attributes include a 2.133 GHz clock frequency, low-voltage operation across 1.06 V to 1.17 V, and an operational temperature range from −30°C to 85°C, enabling integration into space-constrained designs that require LPDDR4 performance characteristics.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM technology with a 1G × 32 memory organization providing 32 Gbit total capacity.
- Performance Supports a clock frequency of 2.133 GHz for high-speed DRAM operation aligned with LPDDR4 signaling.
- Power Operates within a supply voltage range of 1.06 V to 1.17 V, consistent with low-voltage LPDDR4 system designs.
- Package Supplied in a 200-ball Very Fine Pitch BGA (200-VFBGA) with a 10 × 14.5 mm footprint for compact board-level integration.
- Temperature Range Rated for operation from −30°C to 85°C to support a variety of thermal environments.
- Memory Format Volatile DRAM device designed specifically as a DRAM memory component in system memory stacks.
Typical Applications
- Mobile devices Used as LPDDR4 DRAM memory to support system memory requirements in mobile and handheld platforms.
- Embedded systems Integrated where a compact, high-density volatile memory solution is required on space-constrained PCBs.
- Consumer electronics Employed in consumer products that use LPDDR4 memory technology and benefit from a small VFBGA package.
Unique Advantages
- Large memory capacity: 32 Gbit density provides substantial DRAM capacity in a single device, simplifying memory subsystem design.
- High-speed operation: 2.133 GHz clock frequency supports LPDDR4-class data rates for memory bandwidth needs.
- Low-voltage operation: 1.06 V to 1.17 V supply range supports low-power LPDDR4 system architectures.
- Compact package: 200-VFBGA (10 × 14.5 mm) minimizes PCB area for space-limited designs.
- Broad operating temperature: −30°C to 85°C rating enables deployment across a range of thermal environments.
Why Choose IC DRAM 32GBIT 200VFBGA?
The MT53E1G32D4NQ-046 WT:F combines Mobile LPDDR4 SDRAM technology, high clock frequency, and a large 32 Gbit density in a compact 200-VFBGA package, making it suitable for designs that require high-density volatile memory in a small form factor. Its low-voltage operation and specified operating temperature range make it applicable to a variety of mobile and embedded memory subsystems.
This device is appropriate for engineers and procurement teams assembling LPDDR4-based memory solutions where capacity, form factor, and electrical operating ranges are key selection criteria.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53E1G32D4NQ-046 WT:F.
