MT53E1G32D4NQ-053 WT:E

The MT53E1G32D4NQ-053 WT:E is a volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It provides 32 Gbit of memory capacity in a 1G × 32 organization and is supplied by Micron Technology Inc.

With a specified clock frequency of 1.866 GHz, a 1.1 V supply voltage and an operating temperature range of −30°C to 85°C (TC), this device addresses designs that require high-speed mobile LPDDR4 memory operating within the stated thermal and electrical limits.

Key Features

• Technology & Type Mobile LPDDR4 SDRAM technology; volatile DRAM format suited for mobile memory subsystems.
• Memory Capacity & Organization 32 Gbit total capacity organized as 1G × 32 to support wide data paths and dense memory requirements.
• Performance Clock frequency rated at 1.866 GHz to support high-speed memory transfers within the specified operating conditions.
• Power Nominal supply voltage of 1.1 V, matching LPDDR4 low-voltage operation.
• Temperature Range Operational temperature range of −30°C to 85°C (TC) for use in designs within this thermal window.
• Package FBGA package style as indicated in the product description for board-level integration.
• Manufacturer Supplied by Micron Technology Inc.

Typical Applications

• Mobile devices — Implemented as mobile LPDDR4 memory where 32 Gbit capacity and 1.866 GHz operation are required.
• Portable electronics — Used in portable systems that leverage LPDDR4 memory for compact, high-density DRAM.
• Memory subsystems — Integrated into memory modules or subsystems that specify a 1G × 32 LPDDR4 device operating at 1.866 GHz.

Unique Advantages

• High nominal clock frequency: 1.866 GHz rating enables higher-speed transfers within the device's specified operating range.
• Large memory capacity: 32 Gbit density supports applications requiring substantial DRAM storage in a single device.
• LPDDR4 architecture: Mobile LPDDR4 technology offers a standard framework for mobile and compact system memory implementations.
• Low-voltage operation: 1.1 V supply level aligns with LPDDR4 low-voltage design targets.
• Wide operating temperature: −30°C to 85°C (TC) specification provides thermal headroom for many embedded and portable environments.
• Established vendor: Manufactured by Micron Technology Inc., providing traceable sourcing information.

Why Choose MT53E1G32D4NQ-053 WT:E?

The MT53E1G32D4NQ-053 WT:E positions itself as a high-density, high-frequency LPDDR4 memory device for designs that require 32 Gbit capacity and 1.866 GHz operation at 1.1 V. Its LPDDR4 architecture and FBGA package format make it suitable for compact, performance-oriented memory subsystems within the specified temperature range.

This device is appropriate for engineers and procurement teams specifying mobile LPDDR4 DRAM with clear electrical and thermal parameters from a known manufacturer. Its documented capacity, organization and operating conditions support straightforward integration into designs that match these requirements.

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