MT53E1G64D4HJ-046 AAT:A
| Part Description |
IC DRAM 64GBIT PAR 556WFBGA |
|---|---|
| Quantity | 614 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G64D4HJ-046 AAT:A – IC DRAM 64GBIT PAR 556WFBGA
The MT53E1G64D4HJ-046 AAT:A is a 64 Gbit DRAM device implemented using Mobile LPDDR4X SDRAM architecture. It is organized as 1G × 64 with a parallel memory interface and a specified clock frequency of 2.133 GHz.
This device is intended for systems that require high-density, high-bandwidth mobile DRAM in a compact BGA package, providing a balance of capacity and interface width for memory-rich embedded or mobile applications.
Key Features
- Memory Architecture Mobile LPDDR4X SDRAM architecture offering the LPDDR4X technology specified in the product data.
- Density & Organization 64 Gbit total capacity organized as 1G × 64 to provide a wide 64-bit data bus per device.
- Clock Frequency Specified clock frequency of 2.133 GHz to support high-bandwidth memory transactions.
- Memory Interface Parallel memory interface as listed in the product specifications.
- Package 556-ball TFBGA / WFBGA package; supplier package listed as 556-WFBGA with package dimensions 12.4 × 12.4 mm.
- Form Factor DRAM in a 556-WFBGA footprint suited for compact board integration.
Typical Applications
- Mobile memory subsystems — LPDDR4X architecture and high density make the device suitable for mobile device memory stacks and related handheld platforms.
- High-bandwidth embedded systems — 2.133 GHz clocking and 1G × 64 organization support designs requiring wide parallel data paths and sustained throughput.
- Compact module integration — The 556-WFBGA (12.4 × 12.4 mm) package supports space-constrained designs that require large memory capacity in a small footprint.
Unique Advantages
- High density 64 Gbit capacity: Provides substantial memory capacity per device to reduce component count for large-memory designs.
- Wide 1G × 64 organization: A 64-bit data path per device enables wide parallel transfers for throughput-oriented applications.
- LPDDR4X SDRAM technology: Specified mobile SDRAM architecture aligns with modern mobile-memory design choices.
- 2.133 GHz clock frequency: Offers a defined high-frequency operating point for bandwidth-sensitive implementations.
- Compact 556-ball BGA package: 556-WFBGA footprint (12.4 × 12.4 mm) facilitates high-density PCB layouts and module integration.
Why Choose IC DRAM 64GBIT PAR 556WFBGA?
The MT53E1G64D4HJ-046 AAT:A combines high-density 64 Gbit capacity with LPDDR4X SDRAM architecture and a wide 1G × 64 organization to address applications that need substantial on-board memory and parallel data throughput. Its 2.133 GHz clock specification and compact 556-ball BGA footprint provide a clear specification set for designers targeting space-constrained, memory-intensive builds.
Manufactured by Micron Technology Inc., this part is positioned for engineers and procurement teams seeking a defined mobile DRAM component with explicit density, interface, frequency, and package information to support system-level design and sourcing decisions.
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