MT53E1G64D4HJ-046 AAT:C

The MT53E1G64D4HJ-046 AAT:C is a 64 Gbit mobile LPDDR4X SDRAM device organized as 1G x 64 with a parallel memory interface. It combines high-frequency operation with automotive-grade qualification for applications that require high-capacity, low-voltage DRAM in a compact BGA package.

Targeted at designs requiring high data-rate volatile memory and robust environmental performance, this device delivers a balance of density, frequency, and temperature range suitable for automotive and embedded mobile applications.

Key Features

• Memory Core Mobile LPDDR4X SDRAM technology with a 1G x 64 organization providing a total capacity of 64 Gbit.
• Performance Rated clock frequency of 2.133 GHz and an access time of 3.5 ns to support high-bandwidth memory operations; write cycle time (word page) of 18 ns.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V consistent with LPDDR4X power envelopes.
• Package 556-TFBGA package (supplier device package: 556-WFBGA, 12.4 × 12.4 mm) for compact mounting in space-constrained designs.
• Operating Range & Qualification Automotive-grade device with AEC-Q100 qualification and an operating temperature range of −40 °C to 105 °C (TC).
• Interface & Format Parallel DRAM interface in a DRAM memory format suitable for systems requiring conventional LPDDR4X connectivity.

Typical Applications

• Automotive Systems Automotive-grade LPDDR4X memory for vehicle systems that require AEC-Q100 qualification and extended temperature operation.
• Mobile and Handheld Devices High-density, mobile LPDDR4X DRAM for compact devices needing a 64 Gbit memory footprint and 2.133 GHz operation.
• Embedded Memory Subsystems Volatile DRAM resource for embedded designs that need parallel memory interface, high frequency, and a compact 556-TFBGA package.

Unique Advantages

• High-density memory in a single device: 64 Gbit capacity (1G × 64) reduces board-level component count for large-memory requirements.
• High-frequency operation: 2.133 GHz clock frequency and 3.5 ns access time enable high-throughput memory access patterns.
• Automotive qualification: AEC-Q100 qualification combined with −40 °C to 105 °C operation supports deployment in automotive environments.
• Low-voltage LPDDR4X operation: 1.06 V–1.17 V supply range supports reduced power consumption consistent with LPDDR4X system designs.
• Compact BGA footprint: 556-WFBGA (12.4 × 12.4 mm) package offers a space-efficient solution for high-density memory integration.

Why Choose MT53E1G64D4HJ-046 AAT:C?

The MT53E1G64D4HJ-046 AAT:C positions itself as a compact, high-capacity LPDDR4X DRAM solution with automotive-grade qualification and a wide operating temperature range. Its combination of 64 Gbit density, 2.133 GHz clock rate, and low-voltage operation addresses designs that require both performance and environmental robustness.

This device is well suited for engineers specifying memory for automotive and mobile-oriented embedded systems that demand high bandwidth, extended temperature tolerance, and a standardized parallel DRAM interface in a small 556-TFBGA package.

Request a quote or submit an inquiry to discuss pricing, availability, and suitability of the MT53E1G64D4HJ-046 AAT:C for your project requirements.