MT53E1G32D4NQ-053 WT:E TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 369 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT53E1G32D4NQ-053 WT:E TR – IC DRAM 32GBIT 1.866GHZ FBGA
The MT53E1G32D4NQ-053 WT:E TR is a volatile SDRAM device based on Mobile LPDDR4 technology, providing a 32 Gbit DRAM solution organized as 1G × 32. It is specified for operation at a clock frequency of 1.866 GHz and a supply voltage of 1.1 V.
Targeted at mobile LPDDR4 memory applications, the device combines high-frequency operation, compact FBGA packaging, and an operating temperature range of −30°C to 85°C to meet the needs of system designs that require LPDDR4 memory integration.
Key Features
- Memory Core SDRAM using Mobile LPDDR4 technology; memory format is DRAM.
- Capacity & Organization 32 Gbit total capacity organized as 1G × 32 for parallel data paths.
- Performance Operates at a clock frequency of 1.866 GHz.
- Power Single supply voltage of 1.1 V.
- Temperature Range Rated for operation from −30°C to 85°C (TC).
- Memory Type Volatile memory intended for temporary data storage.
- Package FBGA package as indicated in the product name for board-level integration.
Typical Applications
- Mobile Devices LPDDR4 memory integration in mobile hardware where Mobile LPDDR4 SDRAM is required.
- Portable Electronics Use in portable systems that require 32 Gbit DRAM capacity and low-voltage 1.1 V operation.
- Memory Subsystems Integration into memory subsystems and modules that utilize 1G × 32 organization and FBGA packaging.
Unique Advantages
- High-frequency operation: 1.866 GHz clock frequency supports high-speed DRAM timing requirements.
- Large density: 32 Gbit capacity enables substantial memory storage in a single device.
- Low-voltage supply: 1.1 V operation aligns with low-voltage mobile system designs.
- Mobile LPDDR4 architecture: Designed to the Mobile LPDDR4 SDRAM technology specified for this product.
- Wide operating temperature: Rated from −30°C to 85°C for designs that require that temperature envelope.
- FBGA package: Package form indicated in the product name for compact board-level implementation.
Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?
The MT53E1G32D4NQ-053 WT:E TR positions itself as a high-density Mobile LPDDR4 DRAM option that combines 32 Gbit capacity, 1G × 32 organization, and 1.866 GHz operation with a 1.1 V supply. Its specified operating temperature range and FBGA packaging make it suitable for designs that require LPDDR4 memory in a compact form factor.
This device is appropriate for design teams and procurement focused on integrating Mobile LPDDR4 DRAM where the listed electrical and thermal specifications match system requirements, offering a straightforward component choice based on documented capacity, frequency, voltage, and temperature ratings.
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