MT53E1G32D4NQ-046 WT:F TR
| Part Description |
IC DRAM 32GBIT 200VFBGA |
|---|---|
| Quantity | 981 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial (Extended) | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E1G32D4NQ-046 WT:F TR – IC DRAM 32GBIT 200VFBGA
The MT53E1G32D4NQ-046 WT:F TR is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM with a 1G x 32 memory organization. It delivers high-rate operation at a 2.133 GHz clock frequency while operating from a low supply voltage range of 1.06 V to 1.17 V.
This device is supplied in a compact 200-VFBGA package (10 × 14.5 mm) and supports an extended operating temperature range of −30°C to 85°C, making it suitable for space-constrained mobile and high-bandwidth memory applications.
Key Features
- Memory Type Volatile DRAM implemented as SDRAM – Mobile LPDDR4.
- Density and Organization 32 Gbit capacity organized as 1G × 32 for high-density system memory design.
- Performance Rated for a 2.133 GHz clock frequency to support high-bandwidth memory transfers.
- Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to reduce power consumption in mobile systems.
- Package 200-VFBGA package (10 × 14.5 mm) for compact PCB footprint and board-level integration.
- Thermal Range Specified operating temperature range from −30°C to 85°C for deployment across a range of environmental conditions.
Typical Applications
- Mobile Devices Used as high-density, low-voltage system memory in mobile platforms that implement LPDDR4 architecture.
- Handheld Computing Provides compact, high-bandwidth DRAM capacity for tablets and portable computing devices constrained by board space and power budget.
- Embedded Systems Serves as a compact memory option for embedded designs requiring 32 Gbit density and operation across −30°C to 85°C.
Unique Advantages
- High-density 32 Gbit capacity: Enables consolidation of memory requirements into a single component for space-efficient designs.
- LPDDR4 performance at 2.133 GHz: Supports high-bandwidth data transfers where sustained throughput is required.
- Low-voltage operation (1.06–1.17 V): Reduces power draw compared with higher-voltage memory alternatives, aiding battery-powered designs.
- Compact 200-VFBGA package (10 × 14.5 mm): Conserves PCB area and simplifies placement in tightly packed assemblies.
- Wide operating temperature range: Rated from −30°C to 85°C for deployments in varied environmental conditions.
Why Choose MT53E1G32D4NQ-046 WT:F TR?
The MT53E1G32D4NQ-046 WT:F TR positions itself as a high-density Mobile LPDDR4 SDRAM option that balances bandwidth, low-voltage operation, and compact packaging. Its 32 Gbit capacity in a 1G × 32 organization and 2.133 GHz clock rating make it appropriate for designs that require significant on-board DRAM bandwidth within limited PCB area.
Engineers designing mobile, handheld, or embedded systems that need a low-voltage, high-density DRAM solution will find this Micron Technology Inc. device suitable for integration where thermal range and package footprint are key considerations.
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