MT53E1G32D4NQ-046 WT:E TR

The MT53E1G32D4NQ-046 WT:E TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture and supplied in an FBGA package. It provides a 1G x 32 memory organization and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.

This device is suited to mobile and portable electronics memory subsystems where high-density, high-frequency volatile memory is required within a compact board-level package and where operation across an industrial-style temperature range is needed.

Key Features

• Memory Technology Mobile LPDDR4 SDRAM architecture delivering high-density volatile memory in a compact form.
• Capacity and Organization 32 Gbit capacity organized as 1G × 32 to support wide data paths and system memory mapping.
• Performance Clock frequency of 2.133 GHz to meet higher-frequency memory interface requirements.
• Supply Voltage 1.1 V operating supply as specified for this LPDDR4 device.
• Package FBGA package format as indicated in the product description for board-level integration.
• Operating Temperature Specified operating range of −30°C to 85°C (TC) for deployment across a broad thermal envelope.
• Memory Type Volatile DRAM format suitable for system working memory.

Typical Applications

• Mobile devices — Designed for use in mobile memory subsystems where Mobile LPDDR4 architecture is required.
• Smartphones and tablets — Provides high-density volatile memory to support application and system memory needs in portable consumer devices.
• Portable electronics — Suitable for compact, board-mounted memory implementations in handheld and portable products that operate within the specified temperature range.

Unique Advantages

• High density in a single device: 32 Gbit capacity reduces the number of memory devices required to achieve target system memory.
• High operating frequency: 2.133 GHz clocking supports designs requiring increased memory bandwidth.
• Industry-standard LPDDR4 architecture: 1G × 32 organization aligns with common mobile memory subsystem designs for integration flexibility.
• Compact FBGA package: Enables board-level mounting while maintaining a small footprint for space-constrained designs.
• Wide operating temperature range: −30°C to 85°C supports operation across varied thermal environments.
• 1.1 V supply compatibility: Meets LPDDR4 nominal voltage requirements for system power planning.

Why Choose MT53E1G32D4NQ-046 WT:E TR?

The MT53E1G32D4NQ-046 WT:E TR delivers a combination of 32 Gbit capacity and 2.133 GHz operation within a Mobile LPDDR4 SDRAM architecture, providing the capacity and speed profile needed for modern mobile and portable memory subsystems. Its 1G × 32 organization and FBGA packaging support integration into compact board-level designs while the −30°C to 85°C operating range addresses broad environmental needs.

This device is appropriate for engineers and procurement teams specifying high-density, high-frequency volatile memory for mobile-focused designs that require a compact form factor and defined electrical and thermal operating parameters.

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