MT53E1G32D2NP-053 RS WT:C
| Part Description |
IC DRAM 32GBIT FBGA |
|---|---|
| Quantity | 654 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G32D2NP-053 RS WT:C – IC DRAM 32GBIT FBGA
The MT53E1G32D2NP-053 RS WT:C is a 32 Gbit DRAM device from Micron Technology Inc., implemented using Mobile LPDDR4 SDRAM architecture. It delivers high-density dynamic memory in an FBGA package and is intended for designs that require LPDDR4 mobile DRAM capacity and organization.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture, suitable for systems adopting LPDDR4 memory technology.
- Density 32 Gbit total memory capacity to support high-density memory requirements.
- Organization 1G × 32 organization, providing a 32-bit data width per memory rank.
- Memory Format DRAM (dynamic random-access memory) storage format.
- Package Provided in an FBGA package as indicated in the product name.
- Manufacturer Produced by Micron Technology Inc., identified by the MT53E1G32D2NP-053 RS WT:C part number.
Typical Applications
- Mobile devices LPDDR4 mobile DRAM for handheld and battery-powered devices that use LPDDR4 memory architectures.
- Embedded systems High-density DRAM for embedded designs requiring a 32 Gbit memory option with a 1G × 32 organization.
- Consumer electronics Memory capacity for consumer products that implement LPDDR4 DRAM for system memory or buffering.
Unique Advantages
- High capacity in a single device: 32 Gbit density reduces the need for multiple memory components when higher capacity is required.
- LPDDR4 mobile architecture: Matches designs that specify Mobile LPDDR4 SDRAM, enabling straightforward adoption where that technology is required.
- 32-bit organization: 1G × 32 organization supports wide data-path implementations and simplifies memory interface planning.
- FBGA packaging: Ball-grid array packaging enables compact board footprint for space-constrained designs.
- Single-source identification: Clear manufacturer and part-number identification (Micron MT53E1G32D2NP-053 RS WT:C) for procurement and BOM clarity.
Why Choose IC DRAM 32GBIT FBGA?
The MT53E1G32D2NP-053 RS WT:C positions itself as a high-density LPDDR4 DRAM option for designs that require 32 Gbit capacity and a 1G × 32 organization. Its specification as Mobile LPDDR4 SDRAM and FBGA packaging make it relevant for mobile and space-constrained applications that adopt LPDDR4 memory architecture.
This device is suitable for engineers and procurement teams seeking a clearly identified Micron DRAM part to meet system memory capacity requirements without introducing undocumented features.
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