MT53E1G32D2NP-053 RS WT:B TR
| Part Description |
IC DRAM 32GBIT FBGA |
|---|---|
| Quantity | 1,357 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G32D2NP-053 RS WT:B TR – IC DRAM 32GBIT FBGA
The MT53E1G32D2NP-053 RS WT:B TR is a 32 Gbit DRAM device from Micron Technology Inc. It implements SDRAM - Mobile LPDDR4 technology in a FBGA package and is organized as 1G x 32.
This device is intended for designs that require high-density DRAM in a compact footprint, leveraging the LPDDR4 mobile SDRAM architecture and 32 Gbit memory capacity.
Key Features
- Technology SDRAM - Mobile LPDDR4 architecture as specified in the product data.
- Memory Organization 1G × 32 organization, providing the stated interface configuration and data width.
- Memory Size 32 Gbit total DRAM capacity for high-density memory requirements.
- Memory Format DRAM device intended for dynamic random-access memory applications.
- Package FBGA package indicated in the product description for surface-mount board integration.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices — LPDDR4 mobile SDRAM architecture makes the device suitable for mobile memory subsystems and related applications.
- Embedded systems — 32 Gbit DRAM in an FBGA package supports embedded designs that require compact, high-density memory.
- High-density memory modules — Appropriate for memory module or carrier designs that integrate 32 Gbit DRAM components.
Unique Advantages
- High-density 32 Gbit capacity: Provides substantial DRAM storage in a single device for compact system designs.
- LPDDR4 mobile SDRAM architecture: Conforms to the specified mobile SDRAM technology for designs targeting LPDDR4 memory interfaces.
- 1G × 32 organization: Offers a defined data-width configuration for straightforward memory mapping in system design.
- FBGA package integration: Surface-mount FBGA packaging supports compact board layouts and assembly processes.
- Manufacturer identification: Supplied by Micron Technology Inc., as listed in the product data.
Why Choose IC DRAM 32GBIT FBGA?
The MT53E1G32D2NP-053 RS WT:B TR positions itself as a high-density LPDDR4 DRAM component suitable for mobile and embedded designs that require 32 Gbit of DRAM in a compact FBGA package. Its 1G × 32 organization and adherence to mobile LPDDR4 SDRAM architecture make it appropriate for systems designed around that memory interface.
This device is suited to engineers and procurement teams specifying high-capacity DRAM where form factor and memory density are primary considerations.
Request a quote or submit a request for pricing and availability for the MT53E1G32D2NP-053 RS WT:B TR to receive further purchasing information and lead-time details.
