MT53E1G32D2NP-046 WT:B TR

The MT53E1G32D2NP-046 WT:B TR is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It delivers 1G × 32 memory organization and a clock frequency of 2.133 GHz, designed for applications requiring high-density LPDDR4 memory in a compact package.

Key attributes include a 1.1 V supply voltage, a 200‑WFBGA package (10×14.5 mm), and an operating temperature range of −30 °C to 85 °C, making it suitable for mobile and other embedded memory applications where form factor, density, and defined thermal range are important.

Key Features

• Memory Technology Mobile LPDDR4 SDRAM architecture providing LPDDR4-compatible signaling and operation.
• Density & Organization 32 Gbit capacity organized as 1G × 32 to support high-density memory requirements.
• Performance Rated clock frequency of 2.133 GHz for high-speed memory transactions.
• Power Operates from a 1.1 V supply voltage.
• Package 200‑WFBGA package, supplier device package specified as 200‑WFBGA (10×14.5 mm) for compact board-level integration.
• Operating Temperature Specified operating temperature range of −30 °C to 85 °C (TC) for use across a range of thermal environments.
• Memory Type & Format Volatile DRAM memory format intended for system memory and transient storage use.

Typical Applications

• Mobile Devices Mobile LPDDR4 memory for handheld platforms and mobile system memory subsystems requiring 32 Gbit density and 2.133 GHz operation.
• Portable Consumer Electronics Compact 200‑WFBGA package allows integration into space-constrained consumer products that need high-density DRAM.
• Embedded Memory Subsystems Use as high-density volatile memory in embedded designs where 1G × 32 organization and LPDDR4 compatibility are required.

Unique Advantages

• High Density: 32 Gbit capacity supports memory-intensive workloads and reduces the need for multiple devices.
• High-Speed Operation: 2.133 GHz clock frequency enables faster memory access rates for performance-sensitive applications.
• Low-Voltage Operation: 1.1 V supply supports designs targeting LPDDR4 power and signaling domains.
• Compact Package: 200‑WFBGA (10×14.5 mm) provides a small PCB footprint for space-constrained assemblies.
• Broad Temperature Range: −30 °C to 85 °C operating range accommodates a variety of environmental conditions.
• Single-Device Solution: 1G × 32 organization offers a straightforward memory topology for system architects.

Why Choose MT53E1G32D2NP-046 WT:B TR?

The MT53E1G32D2NP-046 WT:B TR positions itself as a high-density LPDDR4 DRAM device offering a combination of 32 Gbit capacity, 2.133 GHz clocking, and 1.1 V operation in a compact 200‑WFBGA package. These characteristics make it well suited for designers targeting mobile and embedded applications that require defined thermal performance and compact board integration.

Manufactured by Micron Technology Inc., this device is appropriate for engineering teams and procurement seeking an LPDDR4 memory component with clear electrical and mechanical specifications. Its density and package form factor support scalable memory architectures and compact system designs.

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