MT53E1G32D2FW-046 WT:C TR
| Part Description |
IC DRAM 32GBIT PAR 200TFBGA |
|---|---|
| Quantity | 221 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 200-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G32D2FW-046 WT:C TR – IC DRAM 32GBIT PAR 200TFBGA
The MT53E1G32D2FW-046 WT:C TR is a 32 Gbit DRAM device manufactured by Micron Technology Inc. It is organized as 1G × 32 and implemented in Mobile LPDDR4 SDRAM technology with a parallel memory interface.
Packaged in a 200‑TFBGA (10×14.5) case and specified with a 2.133 GHz clock frequency, this device targets designs that require high-density parallel LPDDR4 memory in a compact BGA footprint.
Key Features
- Memory Capacity and Organization 32 Gbit total capacity arranged as 1G × 32 to provide wide data paths in a single device.
- Technology Mobile LPDDR4 SDRAM implementation as indicated in the product specification.
- Clock Frequency Specified clock frequency of 2.133 GHz.
- Interface Parallel memory interface for systems designed to operate with parallel DRAM configurations.
- Package 200‑TFBGA supplier device package (10×14.5) for compact board-level integration.
Typical Applications
- Mobile Devices Integration where Mobile LPDDR4 memory density and a parallel interface are part of the memory subsystem design.
- Embedded Systems Use in embedded boards requiring a high-capacity parallel DRAM in a 200‑TFBGA footprint.
- High-Density Memory Modules Suitable for module-level or single-device solutions demanding 1G×32 organization and high clocking.
Unique Advantages
- High density 32 Gbit capacity: Consolidates large memory capacity into a single device using 1G × 32 organization to reduce component count.
- Mobile LPDDR4 technology: Provides the memory architecture specified as Mobile LPDDR4 for applicable designs.
- 2.133 GHz clocking: Documented clock frequency to meet designs that require this operating point.
- Compact BGA package: 200‑TFBGA (10×14.5) package supports dense, space-constrained board layouts.
- Parallel interface compatibility: Matches systems designed around a parallel DRAM interface and wide data organization.
Why Choose IC DRAM 32GBIT PAR 200TFBGA?
This Micron-manufactured device delivers 32 Gbit of Mobile LPDDR4 DRAM in a 1G × 32 organization with a parallel interface and a 2.133 GHz clock frequency, all in a 200‑TFBGA (10×14.5) package. It is positioned for designs that require a high-density parallel LPDDR4 memory element in a compact BGA form factor.
The MT53E1G32D2FW-046 WT:C TR is appropriate for engineers specifying exact memory capacity, organization, interface type, clocking, and package dimensions in their designs, providing a single-device option to meet those requirements.
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