MT53E1G32D2NP-046 WT:A
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200WFBGA |
|---|---|
| Quantity | 451 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-WFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E1G32D2NP-046 WT:A – 32 Gbit Mobile LPDDR4 DRAM, 2.133 GHz, 200‑WFBGA
The MT53E1G32D2NP-046 WT:A is a volatile SDRAM memory device from Micron Technology Inc. Implemented as Mobile LPDDR4 with a 1G × 32 organization, it provides 32 Gbit of DRAM capacity in a 200‑WFBGA package (10 × 14.5 mm).
Key characteristics include a 2.133 GHz clock frequency, 1.1 V supply voltage and an operating temperature range of −30°C to 85°C, making it suitable for designs that specify Mobile LPDDR4 DRAM operating points and compact BGA packaging.
Key Features
- Memory Core Volatile SDRAM implemented as Mobile LPDDR4 with a memory organization of 1G × 32 and a total density of 32 Gbit.
- Performance Clock frequency specified at 2.133 GHz for high-rate DRAM operation within LPDDR4 parameters.
- Power Low-voltage operation with a 1.1 V supply requirement.
- Package Supplied in a 200‑WFBGA package with a 10 × 14.5 mm footprint for compact board integration.
- Temperature Range Operating temperature specified from −30°C to 85°C (TC).
- Memory Format Standard DRAM format with component-level specifications for system memory implementation.
Unique Advantages
- High-density memory: 32 Gbit capacity enables larger memory footprints in a single device footprint.
- High-frequency operation: 2.133 GHz clocking supports designs that require higher DRAM data rates within the Mobile LPDDR4 class.
- Low-voltage supply: 1.1 V operation aligns with low-voltage system power rails.
- Compact BGA packaging: 200‑WFBGA (10 × 14.5 mm) provides a space-efficient package for board-level integration.
- Wide operating range: Specified −30°C to 85°C supports deployments across varied thermal environments.
Why Choose IC DRAM 32GBIT 2.133GHZ 200WFBGA?
The MT53E1G32D2NP-046 WT:A positions itself as a high-density Mobile LPDDR4 DRAM device that combines 32 Gbit capacity, 2.133 GHz clocking and 1.1 V operation in a compact 200‑WFBGA package. These documented specifications make it appropriate for board designs that require specified LPDDR4 performance, low-voltage supply compatibility and a defined operating temperature window.
This device is suited for engineers and procurement teams selecting component-level Mobile LPDDR4 memory parts where documented density, frequency, voltage and package dimensions are primary selection criteria. Its specification set supports planning for scalability and board-level integration based on the provided electrical and mechanical characteristics.
Request a quote or contact sales to obtain pricing, lead-time information or to submit a component inquiry for the MT53E1G32D2NP-046 WT:A.
