MT53E1G32D2FW-046 WT:C
| Part Description |
IC DRAM 32GBIT PAR 200TFBGA |
|---|---|
| Quantity | 802 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 200-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53E1G32D2FW-046 WT:C – IC DRAM 32GBIT PAR 200TFBGA
The MT53E1G32D2FW-046 WT:C is a 32 Gbit DRAM device implemented in SDRAM - Mobile LPDDR4 technology and manufactured by Micron Technology Inc. It is organized as 1G x 32 and uses a parallel memory interface in a 200-TFBGA (10 × 14.5 mm) package.
This device is intended for designs that require high-density LPDDR4 memory in a compact BGA package, providing a defined clock frequency of 2.133 GHz for timing and data-rate planning.
Key Features
- Memory Type and Technology SDRAM implemented in Mobile LPDDR4 technology for applications specifying LPDDR4 architecture.
- Density and Organization 32 Gbit total capacity arranged as 1G × 32, enabling high-density memory integration.
- Interface and Topology Parallel memory interface suitable for designs that require a 32-bit wide data organization.
- Clock Frequency Defined clock frequency of 2.133 GHz for use in timing and performance calculations.
- Package 200-TFBGA package, dimensioned at 10 × 14.5 mm, for BGA-mounted board-level integration.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices — Memory integration for systems specifying Mobile LPDDR4 DRAM technology.
- High-density memory subsystems — Use where a 32 Gbit DRAM organized as 1G × 32 is required.
- Compact BGA implementations — Board-level designs that need a 200-TFBGA (10 × 14.5 mm) package footprint.
Unique Advantages
- High memory capacity: 32 Gbit density supports applications that require substantial DRAM capacity.
- LPDDR4 architecture: Mobile LPDDR4 technology aligns with systems targeting that SDRAM standard.
- Defined performance parameter: 2.133 GHz clock frequency provides a clear timing specification for system integration.
- Wide data organization: 1G × 32 organization and parallel interface enable 32-bit data paths on compatible designs.
- Compact BGA package: 200-TFBGA (10 × 14.5 mm) package supports densely populated PCB layouts.
Why Choose IC DRAM 32GBIT PAR 200TFBGA?
The MT53E1G32D2FW-046 WT:C positions itself as a high-density LPDDR4 DRAM option for designs requiring a 32 Gbit memory device in a compact 200-TFBGA package. Its defined organization (1G × 32), parallel interface, and 2.133 GHz clock frequency make it suitable for engineering teams that need explicit hardware parameters for timing and board integration.
This Micron-manufactured device is appropriate for projects targeting Mobile LPDDR4 memory architectures and for customers seeking a clear, specification-driven DRAM component for high-capacity memory subsystems.
To request a quote or submit an inquiry for MT53E1G32D2FW-046 WT:C, please request a quote or contact our sales channel to obtain pricing and availability information.
