MT53E1G32D2NP-053 RS WT:C TR
| Part Description |
IC DRAM 32GBIT FBGA |
|---|---|
| Quantity | 842 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G32D2NP-053 RS WT:C TR – IC DRAM 32GBIT FBGA
The MT53E1G32D2NP-053 RS WT:C TR is a 32 Gbit DRAM device from Micron Technology Inc., presented as an FBGA package. The memory is based on SDRAM - Mobile LPDDR4 architecture and is organized as 1G × 32.
This device is intended for system designs that require high-density DRAM in a mobile LPDDR4 form factor, offering a compact memory option for embedded and mobile-oriented applications.
Key Features
- Manufacturer Micron Technology Inc., a supplier of this DRAM device.
- Memory Technology SDRAM - Mobile LPDDR4. The device implements the mobile LPDDR4 SDRAM architecture as specified in the product data.
- Memory Organization 1G × 32. Organized for 32-bit wide data transactions.
- Memory Capacity 32 Gbit total density, provided as a single DRAM component.
- Memory Format DRAM. Designed as a dynamic random-access memory component.
- Package Type FBGA, as indicated in the product name.
- Part Identification Available as MT53E1G32D2NP-053 RS WT:C TR, the full manufacturer part number for procurement and BOM entry.
Typical Applications
- Mobile devices — Serves as high-density DRAM for designs targeting mobile LPDDR4 memory architectures.
- Embedded systems — Suitable where compact, high-capacity DRAM is required in an FBGA package for board-level integration.
- Memory subsystems — Used as a DRAM component within memory stacks or modules that adopt LPDDR4 architecture.
Unique Advantages
- High-density capacity: 32 Gbit provides significant memory density in a single device for space-constrained designs.
- LPDDR4 architecture: Built on Mobile LPDDR4 SDRAM technology to align with LPDDR4-based system designs.
- 32-bit data organization: 1G × 32 organization supports 32-bit data paths for straightforward integration into 32-bit memory subsystems.
- FBGA packaging: Package style indicated as FBGA to support compact board mounting and integration.
- Manufacturer traceability: Supplied by Micron Technology Inc., identified by the full part number for accurate procurement and inventory control.
Why Choose MT53E1G32D2NP-053 RS WT:C TR?
The MT53E1G32D2NP-053 RS WT:C TR positions itself as a high-density DRAM option in the mobile LPDDR4 class, offering a straightforward 1G × 32 organization and 32 Gbit capacity in an FBGA package. It is suitable for engineers and procurement teams specifying LPDDR4-based memory for compact, embedded, or mobile-focused designs.
Choosing this Micron part supports designs that require a single-component solution for 32 Gbit DRAM density within LPDDR4 architecture constraints, enabling consistent part identification and ordering through the full manufacturer part number.
If you would like pricing, availability, or to submit a quote request for MT53E1G32D2NP-053 RS WT:C TR, please request a quote or contact sales for further assistance.
