MT53E1G64D4HJ-046 AAT:C TR

The MT53E1G64D4HJ-046 AAT:C TR is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM architecture with a 1G x 64 memory organization and a parallel interface. It is supplied in a 556-WFBGA package (12.4x12.4 mm) and targeted for applications requiring high-density mobile LPDDR4X memory in automotive-grade environments.

Key characteristics include a maximum clock frequency of 2.133 GHz, an access time of 3.5 ns, low-voltage operation between 1.06 V and 1.17 V, and AEC-Q100 qualification with an operating temperature range of -40°C to 105°C.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM organized as 1G x 64, providing 64 Gbit total capacity for high-density memory requirements.
• Performance Supports a clock frequency up to 2.133 GHz with an access time of 3.5 ns and a write cycle time (word/page) of 18 ns for deterministic timing characteristics.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V consistent with LPDDR4X specifications.
• Interface Parallel memory interface with 1G x 64 organization to match systems designed for parallel DRAM integration.
• Package 556-WFBGA package (12.4x12.4) providing a compact footprint for board-level integration.
• Automotive Qualification & Reliability AEC-Q100 qualification and Grade: Automotive, with an operating temperature range of -40°C to 105°C (TC) for automotive and harsh-environment deployment.

Typical Applications

• Automotive systems — Automotive-grade LPDDR4X memory for vehicle electronics where AEC-Q100 qualification and wide operating temperature are required.
• Mobile and embedded platforms — High-density mobile LPDDR4X memory for compact systems that require a parallel DRAM interface and low-voltage operation.
• High-capacity memory designs — Designs that need 64 Gbit of volatile DRAM in a 1G x 64 organization and compact WFBGA footprint.

Unique Advantages

• High-density memory — 64 Gbit capacity in a single 1G x 64 device reduces BOM complexity for large memory requirements.
• Automotive qualification — AEC-Q100 qualification and automotive grade enable deployment in automotive and other demanding environments.
• Wide temperature range — Rated for -40°C to 105°C (TC) to support operation across extended ambient conditions.
• Compact package — 556-WFBGA (12.4x12.4) footprint offers space-efficient board integration.
• Low-voltage operation — 1.06 V to 1.17 V supply range consistent with LPDDR4X power budgets.
• Deterministic timing — 3.5 ns access time and 18 ns write cycle time (word/page) for predictable memory timing behavior.

Why Choose MT53E1G64D4HJ-046 AAT:C TR?

The MT53E1G64D4HJ-046 AAT:C TR combines mobile LPDDR4X architecture with 64 Gbit density and automotive-grade qualification, making it suitable for systems that require compact, high-capacity volatile memory with defined timing and low-voltage operation. Its 556-WFBGA package and 1G x 64 organization simplify board integration where space and interface compatibility are important.

This device is well suited to designs that demand AEC-Q100-qualified memory, operation across -40°C to 105°C, and LPDDR4X power characteristics. The combination of capacity, package size, timing, and automotive qualification supports long-term deployments in automotive and other demanding embedded applications.

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