MT53E1G64D4HJ-046 AIT:C

The MT53E1G64D4HJ-046 AIT:C is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM architecture. It provides a 1G x 64 memory organization with a parallel memory interface designed for high-density, high-throughput embedded memory needs.

Targeted at automotive and mobile system designs, this device combines high clock capability and automotive-grade qualification to deliver fast access and reliable operation across a wide temperature range.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM technology with a memory organization of 1G × 64 and a total memory size of 64 Gbit.
• Performance High-speed operation with a clock frequency of 2.133 GHz and an access time of 3.5 ns; write cycle time (word page) of 18 ns for predictable page operations.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V suitable for power-sensitive designs.
• Interface Parallel memory interface supporting standard DRAM operation in systems that require parallel data paths.
• Package Supplied in a 556-TFBGA / 556-WFBGA package with a 12.4×12.4 mm footprint, enabling compact board integration.
• Temperature & Qualification Designed for operation from −40°C to 95°C (TC) and qualified to AEC-Q100 for automotive applications.

Typical Applications

• Automotive Systems — Memory for automotive infotainment, instrument clusters or other in-vehicle systems where AEC-Q100 qualification and wide temperature range are required.
• Mobile Platforms — High-density LPDDR4X memory for mobile and handheld devices that require compact, low-voltage DRAM.
• Embedded Computing — High-throughput parallel DRAM for embedded controllers and compute modules that need fast random access and short write cycle times.

Unique Advantages

• High Density: 64 Gbit capacity in a single DRAM device reduces the need for multiple chips and simplifies memory subsystem design.
• Automotive Qualification: AEC-Q100 qualification and −40°C to 95°C operating range support deployment in automotive environments.
• High-Speed Operation: 2.133 GHz clock frequency and 3.5 ns access time enable low-latency data access for performance-sensitive applications.
• Low-Voltage Efficiency: 1.06 V to 1.17 V supply range helps minimize power consumption in battery-powered or thermally constrained designs.
• Compact Package: 556-WFBGA (12.4×12.4 mm) packaging provides a space-efficient footprint for high-density board layouts.

Why Choose IC DRAM 64GBIT PAR 556WFBGA?

The MT53E1G64D4HJ-046 AIT:C positions itself as a high-density, automotive-qualified LPDDR4X DRAM solution that balances speed, power efficiency, and package integration. Its combination of 64 Gbit capacity, 2.133 GHz operation, and AEC-Q100 qualification makes it suitable for designs that require both bandwidth and environmental robustness.

This device is appropriate for engineers specifying memory for automotive and mobile platforms where compact footprint, low-voltage operation, and predictable timing (3.5 ns access time, 18 ns write cycle time) are key selection criteria. Offered by Micron Technology Inc., it provides a straightforward option for systems demanding automotive-grade DRAM performance.

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