MT53E1G64D4HJ-046 AUT:C

The MT53E1G64D4HJ-046 AUT:C is a 64 Gbit DRAM device implemented in Mobile LPDDR4X SDRAM technology with a 1G × 64 memory organization and parallel interface. It delivers high-speed operation with a specified clock frequency of 2.133 GHz and access timing suited to bandwidth-sensitive embedded designs.

Designed for automotive environments, this AEC-Q100 qualified device supports a wide operating temperature range of -40°C to 125°C (TC) and operates from a low supply voltage of 1.06 V to 1.17 V. It is supplied in a compact 556 WFBGA package (12.4 × 12.4 mm) for dense system integration.

Key Features

• Core / Memory  Mobile LPDDR4X SDRAM technology; memory format is DRAM with a 1G × 64 organization delivering 64 Gbit total capacity.
• Performance  Clock frequency specified at 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns.
• Power  Low-voltage operation with a supply range of 1.06 V to 1.17 V to support energy-conscious designs.
• Package  Available in a 556-TFBGA / 556-WFBGA package with a 12.4 × 12.4 mm footprint for compact board-level integration.
• Reliability & Qualification  AEC-Q100 qualification and an operating temperature range of -40°C to 125°C (TC) for demanding environmental conditions.

Typical Applications

• Automotive systems: Automotive-qualified memory for in-vehicle systems that require AEC-Q100-rated DRAM and extended temperature operation.
• Mobile and portable devices: High-density LPDDR4X memory in compact package footprints where low-voltage, high-frequency operation is required.
• Embedded high-density memory: System designs needing 64 Gbit of DRAM capacity in a 556 WFBGA (12.4 × 12.4 mm) package for space-constrained boards.

Unique Advantages

• Automotive-qualified AEC-Q100: Explicit AEC-Q100 qualification supports deployment in automotive-grade systems and environments.
• Large 64 Gbit capacity: 1G × 64 organization provides high density for memory-intensive applications.
• High-speed timing: 2.133 GHz clock rate and 3.5 ns access time enable fast data access for performance-sensitive designs.
• Low-voltage operation: 1.06 V to 1.17 V supply range enables lower operating voltages compared to higher-voltage DRAM options.
• Compact BGA footprint: 556-WFBGA (12.4 × 12.4 mm) helps minimize PCB area while providing high memory density.
• Wide temperature range: Rated for -40°C to 125°C (TC) to meet requirements of harsh or variable environments.

Why Choose MT53E1G64D4HJ-046 AUT:C?

The MT53E1G64D4HJ-046 AUT:C combines high-density 64 Gbit LPDDR4X DRAM architecture with high-frequency operation and low-voltage supply to address designs that require both performance and power efficiency. Its AEC-Q100 qualification and extended temperature range make it suitable for applications that demand automotive-grade reliability.

This device is well suited for engineers specifying compact, high-capacity memory in systems where PCB real estate, operating temperature, and compliance for automotive environments are key considerations.

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